Abstract
Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi1 + x. Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations. X-ray diffraction experiments have revealed the preservation of the B1 structure throughout the whole implantation processes. Variation of the lattice parameter a0 which is characteristic of B1 compounds at low implantation fluences and subsequent lattice expansion at high implantation fluences were observed with RT implantations, whereas a0 showed gradual decreases at high fluences with HT implantations. Electrical resistivities increased with implantation fluences in both RT and HT implantations and showed poor conducting properties. The superconducting transition temperature Tc decreased below 1.3 K for RT implantation, while it remains at 33% of the initial value for HT implantations at the concentration with x = 0.33.
| Original language | English |
|---|---|
| Pages (from-to) | 746-749 |
| Number of pages | 4 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 39 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1989 Mar 2 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
Cite this
Nitrogen ion implantation into ZrN thin films. / Kobayashi, Naoto; Tanoue, H.
In: Nuclear Inst. and Methods in Physics Research, B, Vol. 39, No. 1-4, 02.03.1989, p. 746-749.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nitrogen ion implantation into ZrN thin films
AU - Kobayashi, Naoto
AU - Tanoue, H.
PY - 1989/3/2
Y1 - 1989/3/2
N2 - Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi1 + x. Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations. X-ray diffraction experiments have revealed the preservation of the B1 structure throughout the whole implantation processes. Variation of the lattice parameter a0 which is characteristic of B1 compounds at low implantation fluences and subsequent lattice expansion at high implantation fluences were observed with RT implantations, whereas a0 showed gradual decreases at high fluences with HT implantations. Electrical resistivities increased with implantation fluences in both RT and HT implantations and showed poor conducting properties. The superconducting transition temperature Tc decreased below 1.3 K for RT implantation, while it remains at 33% of the initial value for HT implantations at the concentration with x = 0.33.
AB - Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi1 + x. Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations. X-ray diffraction experiments have revealed the preservation of the B1 structure throughout the whole implantation processes. Variation of the lattice parameter a0 which is characteristic of B1 compounds at low implantation fluences and subsequent lattice expansion at high implantation fluences were observed with RT implantations, whereas a0 showed gradual decreases at high fluences with HT implantations. Electrical resistivities increased with implantation fluences in both RT and HT implantations and showed poor conducting properties. The superconducting transition temperature Tc decreased below 1.3 K for RT implantation, while it remains at 33% of the initial value for HT implantations at the concentration with x = 0.33.
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U2 - 10.1016/0168-583X(89)90889-6
DO - 10.1016/0168-583X(89)90889-6
M3 - Article
AN - SCOPUS:0024622589
VL - 39
SP - 746
EP - 749
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-4
ER -