Nitrogen ion implantation into ZrN thin films

Naoto Kobayashi, H. Tanoue

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi1 + x. Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations. X-ray diffraction experiments have revealed the preservation of the B1 structure throughout the whole implantation processes. Variation of the lattice parameter a0 which is characteristic of B1 compounds at low implantation fluences and subsequent lattice expansion at high implantation fluences were observed with RT implantations, whereas a0 showed gradual decreases at high fluences with HT implantations. Electrical resistivities increased with implantation fluences in both RT and HT implantations and showed poor conducting properties. The superconducting transition temperature Tc decreased below 1.3 K for RT implantation, while it remains at 33% of the initial value for HT implantations at the concentration with x = 0.33.

Original languageEnglish
Pages (from-to)746-749
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume39
Issue number1-4
DOIs
Publication statusPublished - 1989 Mar 2
Externally publishedYes

Fingerprint

nitrogen ions
Ion implantation
ion implantation
implantation
Nitrogen
Thin films
thin films
fluence
Temperature
Superconductivity
Superconducting transition temperature
Lattice constants
Structural properties
room temperature
Ions
X ray diffraction
electrical resistivity
Experiments
lattice parameters
superconductivity

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Nitrogen ion implantation into ZrN thin films. / Kobayashi, Naoto; Tanoue, H.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 39, No. 1-4, 02.03.1989, p. 746-749.

Research output: Contribution to journalArticle

@article{b98c8227b9694a8bac010e2c371d77ff,
title = "Nitrogen ion implantation into ZrN thin films",
abstract = "Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi1 + x. Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations. X-ray diffraction experiments have revealed the preservation of the B1 structure throughout the whole implantation processes. Variation of the lattice parameter a0 which is characteristic of B1 compounds at low implantation fluences and subsequent lattice expansion at high implantation fluences were observed with RT implantations, whereas a0 showed gradual decreases at high fluences with HT implantations. Electrical resistivities increased with implantation fluences in both RT and HT implantations and showed poor conducting properties. The superconducting transition temperature Tc decreased below 1.3 K for RT implantation, while it remains at 33{\%} of the initial value for HT implantations at the concentration with x = 0.33.",
author = "Naoto Kobayashi and H. Tanoue",
year = "1989",
month = "3",
day = "2",
doi = "10.1016/0168-583X(89)90889-6",
language = "English",
volume = "39",
pages = "746--749",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Nitrogen ion implantation into ZrN thin films

AU - Kobayashi, Naoto

AU - Tanoue, H.

PY - 1989/3/2

Y1 - 1989/3/2

N2 - Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi1 + x. Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations. X-ray diffraction experiments have revealed the preservation of the B1 structure throughout the whole implantation processes. Variation of the lattice parameter a0 which is characteristic of B1 compounds at low implantation fluences and subsequent lattice expansion at high implantation fluences were observed with RT implantations, whereas a0 showed gradual decreases at high fluences with HT implantations. Electrical resistivities increased with implantation fluences in both RT and HT implantations and showed poor conducting properties. The superconducting transition temperature Tc decreased below 1.3 K for RT implantation, while it remains at 33% of the initial value for HT implantations at the concentration with x = 0.33.

AB - Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi1 + x. Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations. X-ray diffraction experiments have revealed the preservation of the B1 structure throughout the whole implantation processes. Variation of the lattice parameter a0 which is characteristic of B1 compounds at low implantation fluences and subsequent lattice expansion at high implantation fluences were observed with RT implantations, whereas a0 showed gradual decreases at high fluences with HT implantations. Electrical resistivities increased with implantation fluences in both RT and HT implantations and showed poor conducting properties. The superconducting transition temperature Tc decreased below 1.3 K for RT implantation, while it remains at 33% of the initial value for HT implantations at the concentration with x = 0.33.

UR - http://www.scopus.com/inward/record.url?scp=0024622589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024622589&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(89)90889-6

DO - 10.1016/0168-583X(89)90889-6

M3 - Article

VL - 39

SP - 746

EP - 749

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -