α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the -zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2001 Oct 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)