Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP

K. Kuriyama, H. Kondo, N. Hayashi, M. Ogura, M. Hasegawa, Naoto Kobayashi, Yukimi Takahashi, S. Watanabe

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Abstract

α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.

Original languageEnglish
Pages (from-to)2546-2548
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number16
DOIs
Publication statusPublished - 2001 Oct 15
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kuriyama, K., Kondo, H., Hayashi, N., Ogura, M., Hasegawa, M., Kobayashi, N., Takahashi, Y., & Watanabe, S. (2001). Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP. Applied Physics Letters, 79(16), 2546-2548. https://doi.org/10.1063/1.1410341