Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP

K. Kuriyama, H. Kondo, N. Hayashi, M. Ogura, M. Hasegawa, Naoto Kobayashi, Yukimi Takahashi, S. Watanabe

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.

Original languageEnglish
Pages (from-to)2546-2548
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number16
DOIs
Publication statusPublished - 2001 Oct 15
Externally publishedYes

Fingerprint

nitrogen ions
wurtzite
annealing
synthesis
Auger spectroscopy
furnaces
electron spectroscopy
ion implantation
x ray diffraction
electron diffraction
dosage
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kuriyama, K., Kondo, H., Hayashi, N., Ogura, M., Hasegawa, M., Kobayashi, N., ... Watanabe, S. (2001). Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP. Applied Physics Letters, 79(16), 2546-2548. https://doi.org/10.1063/1.1410341

Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP. / Kuriyama, K.; Kondo, H.; Hayashi, N.; Ogura, M.; Hasegawa, M.; Kobayashi, Naoto; Takahashi, Yukimi; Watanabe, S.

In: Applied Physics Letters, Vol. 79, No. 16, 15.10.2001, p. 2546-2548.

Research output: Contribution to journalArticle

Kuriyama, K, Kondo, H, Hayashi, N, Ogura, M, Hasegawa, M, Kobayashi, N, Takahashi, Y & Watanabe, S 2001, 'Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP', Applied Physics Letters, vol. 79, no. 16, pp. 2546-2548. https://doi.org/10.1063/1.1410341
Kuriyama K, Kondo H, Hayashi N, Ogura M, Hasegawa M, Kobayashi N et al. Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP. Applied Physics Letters. 2001 Oct 15;79(16):2546-2548. https://doi.org/10.1063/1.1410341
Kuriyama, K. ; Kondo, H. ; Hayashi, N. ; Ogura, M. ; Hasegawa, M. ; Kobayashi, Naoto ; Takahashi, Yukimi ; Watanabe, S. / Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP. In: Applied Physics Letters. 2001 ; Vol. 79, No. 16. pp. 2546-2548.
@article{3988bfa5143e413ca2d763b28db59232,
title = "Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP",
abstract = "α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 {\AA} in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.",
author = "K. Kuriyama and H. Kondo and N. Hayashi and M. Ogura and M. Hasegawa and Naoto Kobayashi and Yukimi Takahashi and S. Watanabe",
year = "2001",
month = "10",
day = "15",
doi = "10.1063/1.1410341",
language = "English",
volume = "79",
pages = "2546--2548",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP

AU - Kuriyama, K.

AU - Kondo, H.

AU - Hayashi, N.

AU - Ogura, M.

AU - Hasegawa, M.

AU - Kobayashi, Naoto

AU - Takahashi, Yukimi

AU - Watanabe, S.

PY - 2001/10/15

Y1 - 2001/10/15

N2 - α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.

AB - α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.

UR - http://www.scopus.com/inward/record.url?scp=0039567119&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039567119&partnerID=8YFLogxK

U2 - 10.1063/1.1410341

DO - 10.1063/1.1410341

M3 - Article

VL - 79

SP - 2546

EP - 2548

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -