Nitrogen profile in SiOxNy prepared by thermal nitridation of ozone oxide

Kaoru Nakajima, Kenji Kimura, Akira Kurokawa, Shingo Ichimura, Hisashi Fukuda

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Abstract

Ultrathin silicon oxynitride films are prepared by ozone and thermal oxidation of Si(001) followed by rapid thermal nitridation. The nitrogen depth profiles in these films are measured by high-resolution Rutherford backscattering spectroscopy. The observed nitrogen profiles are essentially similar, having a peak at the SiO2/Si interface, although the interface strain in the ozone oxide is known to be much smaller than that of the thermal oxide. This indicates that the interface strain relaxation due to the nitrogen incorporation is not responsible for the nitrogen accumulation at the interface.

Original languageEnglish
Pages (from-to)4011-4012
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number6 A
Publication statusPublished - 2001 Jun 1

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Keywords

  • High-resolution RBS
  • Interface strain
  • Ozone oxidation
  • Silicon oxynitride

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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