Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers

Sora Kawai, Hayate Yamano, Takahiro Sonoda, Kanami Kato, Jorge J. Buendia, Taisuke Kageura, Ryosuke Fukuda, Takuma Okada, Takashi Tanii, Taisei Higuchi, Moriyoshi Haruyama, Keisuke Yamada, Shinobu Onoda, Takeshi Ohshima, Wataru Kada, Osamu Hanaizumi, Alastair Stacey, Tokuyuki Teraji, Shozo Kono, Junichi Isoya & 1 others Hiroshi Kawarada

    Research output: Contribution to journalArticle

    Abstract

    The nitrogen-vacancy (NV) center in diamond is the most promising candidate for quantum sensing because of its beneficial properties. For quantum-sensing applications, a shallow NV center is critical for approximating the sensing target on a diamond surface. Such shallow NV centers are strongly affected by the diamond surface termination. The properties of shallow NV centers in hydrogen-, oxygen-, and fluorine-terminated diamond have been well studied. In recent years, silicon-terminated diamond has also been investigated; however, the effect of silicon-terminated diamond on the properties of shallow NV centers remains unclear. Recently, the suitability of nitrogen-terminated diamond for shallow NV centers has been theoretically and experimentally examined; however, quantum sensing has not yet been performed. In this work, we evaluated the effect of silicon and nitrogen termination on shallow NV centers. The negatively charged state of shallow NV centers was unstable below silicon termination. In contrast, the properties of shallow NV centers in nitrogen-terminated diamond were satisfactory for quantum sensing and enabled 1 H NMR detection. Our results are in good agreement with previous reports on silicon and nitrogen terminations and provide the perspective that the stability of shallow NV centers highly depends on the polarity of electron affinity of the diamond surface.

    Original languageEnglish
    Pages (from-to)3594-3604
    Number of pages11
    JournalJournal of Physical Chemistry C
    Volume123
    Issue number6
    DOIs
    Publication statusPublished - 2019 Feb 14

    Fingerprint

    Diamond
    Vacancies
    Diamonds
    Nitrogen
    diamonds
    Nuclear magnetic resonance
    nitrogen
    nuclear magnetic resonance
    Silicon
    silicon
    Electron affinity
    Fluorine
    electron affinity
    fluorine
    Hydrogen

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Energy(all)
    • Physical and Theoretical Chemistry
    • Surfaces, Coatings and Films

    Cite this

    Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers. / Kawai, Sora; Yamano, Hayate; Sonoda, Takahiro; Kato, Kanami; Buendia, Jorge J.; Kageura, Taisuke; Fukuda, Ryosuke; Okada, Takuma; Tanii, Takashi; Higuchi, Taisei; Haruyama, Moriyoshi; Yamada, Keisuke; Onoda, Shinobu; Ohshima, Takeshi; Kada, Wataru; Hanaizumi, Osamu; Stacey, Alastair; Teraji, Tokuyuki; Kono, Shozo; Isoya, Junichi; Kawarada, Hiroshi.

    In: Journal of Physical Chemistry C, Vol. 123, No. 6, 14.02.2019, p. 3594-3604.

    Research output: Contribution to journalArticle

    Kawai, S, Yamano, H, Sonoda, T, Kato, K, Buendia, JJ, Kageura, T, Fukuda, R, Okada, T, Tanii, T, Higuchi, T, Haruyama, M, Yamada, K, Onoda, S, Ohshima, T, Kada, W, Hanaizumi, O, Stacey, A, Teraji, T, Kono, S, Isoya, J & Kawarada, H 2019, 'Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers' Journal of Physical Chemistry C, vol. 123, no. 6, pp. 3594-3604. https://doi.org/10.1021/acs.jpcc.8b11274
    Kawai, Sora ; Yamano, Hayate ; Sonoda, Takahiro ; Kato, Kanami ; Buendia, Jorge J. ; Kageura, Taisuke ; Fukuda, Ryosuke ; Okada, Takuma ; Tanii, Takashi ; Higuchi, Taisei ; Haruyama, Moriyoshi ; Yamada, Keisuke ; Onoda, Shinobu ; Ohshima, Takeshi ; Kada, Wataru ; Hanaizumi, Osamu ; Stacey, Alastair ; Teraji, Tokuyuki ; Kono, Shozo ; Isoya, Junichi ; Kawarada, Hiroshi. / Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers. In: Journal of Physical Chemistry C. 2019 ; Vol. 123, No. 6. pp. 3594-3604.
    @article{812493309cf94ab580ee25de347315e4,
    title = "Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers",
    abstract = "The nitrogen-vacancy (NV) center in diamond is the most promising candidate for quantum sensing because of its beneficial properties. For quantum-sensing applications, a shallow NV center is critical for approximating the sensing target on a diamond surface. Such shallow NV centers are strongly affected by the diamond surface termination. The properties of shallow NV centers in hydrogen-, oxygen-, and fluorine-terminated diamond have been well studied. In recent years, silicon-terminated diamond has also been investigated; however, the effect of silicon-terminated diamond on the properties of shallow NV centers remains unclear. Recently, the suitability of nitrogen-terminated diamond for shallow NV centers has been theoretically and experimentally examined; however, quantum sensing has not yet been performed. In this work, we evaluated the effect of silicon and nitrogen termination on shallow NV centers. The negatively charged state of shallow NV centers was unstable below silicon termination. In contrast, the properties of shallow NV centers in nitrogen-terminated diamond were satisfactory for quantum sensing and enabled 1 H NMR detection. Our results are in good agreement with previous reports on silicon and nitrogen terminations and provide the perspective that the stability of shallow NV centers highly depends on the polarity of electron affinity of the diamond surface.",
    author = "Sora Kawai and Hayate Yamano and Takahiro Sonoda and Kanami Kato and Buendia, {Jorge J.} and Taisuke Kageura and Ryosuke Fukuda and Takuma Okada and Takashi Tanii and Taisei Higuchi and Moriyoshi Haruyama and Keisuke Yamada and Shinobu Onoda and Takeshi Ohshima and Wataru Kada and Osamu Hanaizumi and Alastair Stacey and Tokuyuki Teraji and Shozo Kono and Junichi Isoya and Hiroshi Kawarada",
    year = "2019",
    month = "2",
    day = "14",
    doi = "10.1021/acs.jpcc.8b11274",
    language = "English",
    volume = "123",
    pages = "3594--3604",
    journal = "Journal of Physical Chemistry C",
    issn = "1932-7447",
    publisher = "American Chemical Society",
    number = "6",

    }

    TY - JOUR

    T1 - Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers

    AU - Kawai, Sora

    AU - Yamano, Hayate

    AU - Sonoda, Takahiro

    AU - Kato, Kanami

    AU - Buendia, Jorge J.

    AU - Kageura, Taisuke

    AU - Fukuda, Ryosuke

    AU - Okada, Takuma

    AU - Tanii, Takashi

    AU - Higuchi, Taisei

    AU - Haruyama, Moriyoshi

    AU - Yamada, Keisuke

    AU - Onoda, Shinobu

    AU - Ohshima, Takeshi

    AU - Kada, Wataru

    AU - Hanaizumi, Osamu

    AU - Stacey, Alastair

    AU - Teraji, Tokuyuki

    AU - Kono, Shozo

    AU - Isoya, Junichi

    AU - Kawarada, Hiroshi

    PY - 2019/2/14

    Y1 - 2019/2/14

    N2 - The nitrogen-vacancy (NV) center in diamond is the most promising candidate for quantum sensing because of its beneficial properties. For quantum-sensing applications, a shallow NV center is critical for approximating the sensing target on a diamond surface. Such shallow NV centers are strongly affected by the diamond surface termination. The properties of shallow NV centers in hydrogen-, oxygen-, and fluorine-terminated diamond have been well studied. In recent years, silicon-terminated diamond has also been investigated; however, the effect of silicon-terminated diamond on the properties of shallow NV centers remains unclear. Recently, the suitability of nitrogen-terminated diamond for shallow NV centers has been theoretically and experimentally examined; however, quantum sensing has not yet been performed. In this work, we evaluated the effect of silicon and nitrogen termination on shallow NV centers. The negatively charged state of shallow NV centers was unstable below silicon termination. In contrast, the properties of shallow NV centers in nitrogen-terminated diamond were satisfactory for quantum sensing and enabled 1 H NMR detection. Our results are in good agreement with previous reports on silicon and nitrogen terminations and provide the perspective that the stability of shallow NV centers highly depends on the polarity of electron affinity of the diamond surface.

    AB - The nitrogen-vacancy (NV) center in diamond is the most promising candidate for quantum sensing because of its beneficial properties. For quantum-sensing applications, a shallow NV center is critical for approximating the sensing target on a diamond surface. Such shallow NV centers are strongly affected by the diamond surface termination. The properties of shallow NV centers in hydrogen-, oxygen-, and fluorine-terminated diamond have been well studied. In recent years, silicon-terminated diamond has also been investigated; however, the effect of silicon-terminated diamond on the properties of shallow NV centers remains unclear. Recently, the suitability of nitrogen-terminated diamond for shallow NV centers has been theoretically and experimentally examined; however, quantum sensing has not yet been performed. In this work, we evaluated the effect of silicon and nitrogen termination on shallow NV centers. The negatively charged state of shallow NV centers was unstable below silicon termination. In contrast, the properties of shallow NV centers in nitrogen-terminated diamond were satisfactory for quantum sensing and enabled 1 H NMR detection. Our results are in good agreement with previous reports on silicon and nitrogen terminations and provide the perspective that the stability of shallow NV centers highly depends on the polarity of electron affinity of the diamond surface.

    UR - http://www.scopus.com/inward/record.url?scp=85061545917&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85061545917&partnerID=8YFLogxK

    U2 - 10.1021/acs.jpcc.8b11274

    DO - 10.1021/acs.jpcc.8b11274

    M3 - Article

    VL - 123

    SP - 3594

    EP - 3604

    JO - Journal of Physical Chemistry C

    JF - Journal of Physical Chemistry C

    SN - 1932-7447

    IS - 6

    ER -