No spin polarization of carriers in InGaN

Atsushi Tackeuchi, T. Kuroda, A. Shikanai, Takayuki Sota, A. Kuramata, K. Domen

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    We report the spin polarization of carriers photoexcited in bulk InGaN by circularly polarized femtosecond optical pulses. No spin polarization is observed in the picosecond time region using spin-dependent pump and probe absorption measurements with a time resolution of 0.35 ps. This is in contrast to the existence of spin polarization in GaAs quantum wells or in InGaAs quantum wells which have a spin relaxation time in the picosecond time region. The unique band structure of InGaN, which has weak spin-orbit interaction, and an in-plane potential fluctuation due to the compositional inhomogeneity of In explains the lack of spin polarization.

    Original languageEnglish
    Pages (from-to)1011-1014
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume7
    Issue number3
    DOIs
    Publication statusPublished - 2000 May

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    Spin polarization
    polarization
    Semiconductor quantum wells
    quantum wells
    Band structure
    Relaxation time
    Laser pulses
    Orbits
    Pumps
    spin-orbit interactions
    inhomogeneity
    relaxation time
    pumps
    probes
    pulses

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    No spin polarization of carriers in InGaN. / Tackeuchi, Atsushi; Kuroda, T.; Shikanai, A.; Sota, Takayuki; Kuramata, A.; Domen, K.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 7, No. 3, 05.2000, p. 1011-1014.

    Research output: Contribution to journalArticle

    Tackeuchi, Atsushi ; Kuroda, T. ; Shikanai, A. ; Sota, Takayuki ; Kuramata, A. ; Domen, K. / No spin polarization of carriers in InGaN. In: Physica E: Low-Dimensional Systems and Nanostructures. 2000 ; Vol. 7, No. 3. pp. 1011-1014.
    @article{d3eb9ef4dc2747bb9fc23f9683bf2264,
    title = "No spin polarization of carriers in InGaN",
    abstract = "We report the spin polarization of carriers photoexcited in bulk InGaN by circularly polarized femtosecond optical pulses. No spin polarization is observed in the picosecond time region using spin-dependent pump and probe absorption measurements with a time resolution of 0.35 ps. This is in contrast to the existence of spin polarization in GaAs quantum wells or in InGaAs quantum wells which have a spin relaxation time in the picosecond time region. The unique band structure of InGaN, which has weak spin-orbit interaction, and an in-plane potential fluctuation due to the compositional inhomogeneity of In explains the lack of spin polarization.",
    author = "Atsushi Tackeuchi and T. Kuroda and A. Shikanai and Takayuki Sota and A. Kuramata and K. Domen",
    year = "2000",
    month = "5",
    doi = "10.1016/S1386-9477(00)00106-5",
    language = "English",
    volume = "7",
    pages = "1011--1014",
    journal = "Physica E: Low-Dimensional Systems and Nanostructures",
    issn = "1386-9477",
    publisher = "Elsevier",
    number = "3",

    }

    TY - JOUR

    T1 - No spin polarization of carriers in InGaN

    AU - Tackeuchi, Atsushi

    AU - Kuroda, T.

    AU - Shikanai, A.

    AU - Sota, Takayuki

    AU - Kuramata, A.

    AU - Domen, K.

    PY - 2000/5

    Y1 - 2000/5

    N2 - We report the spin polarization of carriers photoexcited in bulk InGaN by circularly polarized femtosecond optical pulses. No spin polarization is observed in the picosecond time region using spin-dependent pump and probe absorption measurements with a time resolution of 0.35 ps. This is in contrast to the existence of spin polarization in GaAs quantum wells or in InGaAs quantum wells which have a spin relaxation time in the picosecond time region. The unique band structure of InGaN, which has weak spin-orbit interaction, and an in-plane potential fluctuation due to the compositional inhomogeneity of In explains the lack of spin polarization.

    AB - We report the spin polarization of carriers photoexcited in bulk InGaN by circularly polarized femtosecond optical pulses. No spin polarization is observed in the picosecond time region using spin-dependent pump and probe absorption measurements with a time resolution of 0.35 ps. This is in contrast to the existence of spin polarization in GaAs quantum wells or in InGaAs quantum wells which have a spin relaxation time in the picosecond time region. The unique band structure of InGaN, which has weak spin-orbit interaction, and an in-plane potential fluctuation due to the compositional inhomogeneity of In explains the lack of spin polarization.

    UR - http://www.scopus.com/inward/record.url?scp=0033726226&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0033726226&partnerID=8YFLogxK

    U2 - 10.1016/S1386-9477(00)00106-5

    DO - 10.1016/S1386-9477(00)00106-5

    M3 - Article

    AN - SCOPUS:0033726226

    VL - 7

    SP - 1011

    EP - 1014

    JO - Physica E: Low-Dimensional Systems and Nanostructures

    JF - Physica E: Low-Dimensional Systems and Nanostructures

    SN - 1386-9477

    IS - 3

    ER -