No spin polarization of carriers in InGaN

Atsushi Tackeuchi, T. Kuroda, A. Shikanai, Takayuki Sota, A. Kuramata, K. Domen

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    We report the spin polarization of carriers photoexcited in bulk InGaN by circularly polarized femtosecond optical pulses. No spin polarization is observed in the picosecond time region using spin-dependent pump and probe absorption measurements with a time resolution of 0.35 ps. This is in contrast to the existence of spin polarization in GaAs quantum wells or in InGaAs quantum wells which have a spin relaxation time in the picosecond time region. The unique band structure of InGaN, which has weak spin-orbit interaction, and an in-plane potential fluctuation due to the compositional inhomogeneity of In explains the lack of spin polarization.

    Original languageEnglish
    Pages (from-to)1011-1014
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Issue number3
    Publication statusPublished - 2000 May


    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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