Non-destructive Raman evaluation of a heavily doped surface layer fabricated by laser doping with B-doped Si nanoparticles

Miho Momose, Yukio Furukawa

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    The heavy B-doping of an intrinsic Si(1 0 0) wafer has been performed by irradiating a B-doped Si nanoparticle film on the surface of the Si(1 0 0) substrate with energy densities of 8.0 and 16.0 J/cm<sup>2</sup> by 532-nm laser light. The thicknesses of the heavily doped surface layers were investigated using Raman spectroscopy. The observed 488.0-nm-excited Raman bands were decomposed into two bands: a Fano-type band due to the heavily doped Si surface layer and a Voigt band due to the lightly doped, intrinsic Si region. The analysis of the Fano-type band indicated that the carrier concentration of the heavily doped region was larger than approximately 10<sup>19</sup> cm<sup>-3</sup>. Based on the two-state model, the thicknesses of the heavily doped surface layers were 480 and 630 nm for the samples prepared with energy densities of 8.0 and 16.0 J/cm<sup>2</sup>, respectively. These values were consistent with those obtained by secondary ion mass spectroscopy (SIMS).

    Original languageEnglish
    Pages (from-to)748-754
    Number of pages7
    JournalMaterials Science in Semiconductor Processing
    Volume39
    DOIs
    Publication statusPublished - 2015 Jul 10

    Fingerprint

    surface layers
    Doping (additives)
    Nanoparticles
    nanoparticles
    Lasers
    evaluation
    lasers
    flux density
    Carrier concentration
    Raman spectroscopy
    Spectroscopy
    Ions
    mass spectroscopy
    wafers
    Substrates
    ions

    Keywords

    • B-doped Si
    • Laser doping
    • Nanoparticle
    • Raman

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanical Engineering
    • Mechanics of Materials

    Cite this

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    title = "Non-destructive Raman evaluation of a heavily doped surface layer fabricated by laser doping with B-doped Si nanoparticles",
    abstract = "The heavy B-doping of an intrinsic Si(1 0 0) wafer has been performed by irradiating a B-doped Si nanoparticle film on the surface of the Si(1 0 0) substrate with energy densities of 8.0 and 16.0 J/cm2 by 532-nm laser light. The thicknesses of the heavily doped surface layers were investigated using Raman spectroscopy. The observed 488.0-nm-excited Raman bands were decomposed into two bands: a Fano-type band due to the heavily doped Si surface layer and a Voigt band due to the lightly doped, intrinsic Si region. The analysis of the Fano-type band indicated that the carrier concentration of the heavily doped region was larger than approximately 1019 cm-3. Based on the two-state model, the thicknesses of the heavily doped surface layers were 480 and 630 nm for the samples prepared with energy densities of 8.0 and 16.0 J/cm2, respectively. These values were consistent with those obtained by secondary ion mass spectroscopy (SIMS).",
    keywords = "B-doped Si, Laser doping, Nanoparticle, Raman",
    author = "Miho Momose and Yukio Furukawa",
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    TY - JOUR

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    AU - Momose, Miho

    AU - Furukawa, Yukio

    PY - 2015/7/10

    Y1 - 2015/7/10

    N2 - The heavy B-doping of an intrinsic Si(1 0 0) wafer has been performed by irradiating a B-doped Si nanoparticle film on the surface of the Si(1 0 0) substrate with energy densities of 8.0 and 16.0 J/cm2 by 532-nm laser light. The thicknesses of the heavily doped surface layers were investigated using Raman spectroscopy. The observed 488.0-nm-excited Raman bands were decomposed into two bands: a Fano-type band due to the heavily doped Si surface layer and a Voigt band due to the lightly doped, intrinsic Si region. The analysis of the Fano-type band indicated that the carrier concentration of the heavily doped region was larger than approximately 1019 cm-3. Based on the two-state model, the thicknesses of the heavily doped surface layers were 480 and 630 nm for the samples prepared with energy densities of 8.0 and 16.0 J/cm2, respectively. These values were consistent with those obtained by secondary ion mass spectroscopy (SIMS).

    AB - The heavy B-doping of an intrinsic Si(1 0 0) wafer has been performed by irradiating a B-doped Si nanoparticle film on the surface of the Si(1 0 0) substrate with energy densities of 8.0 and 16.0 J/cm2 by 532-nm laser light. The thicknesses of the heavily doped surface layers were investigated using Raman spectroscopy. The observed 488.0-nm-excited Raman bands were decomposed into two bands: a Fano-type band due to the heavily doped Si surface layer and a Voigt band due to the lightly doped, intrinsic Si region. The analysis of the Fano-type band indicated that the carrier concentration of the heavily doped region was larger than approximately 1019 cm-3. Based on the two-state model, the thicknesses of the heavily doped surface layers were 480 and 630 nm for the samples prepared with energy densities of 8.0 and 16.0 J/cm2, respectively. These values were consistent with those obtained by secondary ion mass spectroscopy (SIMS).

    KW - B-doped Si

    KW - Laser doping

    KW - Nanoparticle

    KW - Raman

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