We have performed time-resolved (TR) core-level and valence-band angle-resolved (AR) photoemission spectroscopy (PES) to investigate ultrafast dynamics of an electron-doped topological insulator Cu0.17Bi2Se3. The Bi 5d5/2 line was composed of a single peak and exhibited broadening upon both heating and pumping, which we interpreted as a change of phonon temperature (Tp), in the surface region. The electronic dynamics and electron temperature (Te), on the other hand, were determined with near-EF TRARPES. The transient temperature deduced from core-level TRPES shows a similar behavior with Te deduced from near-EF TRARPES. This similar behavior of Tp and Te can be reproduced not by a simple two-temperature model but by a modified one, although we cannot exclude a possibility that core-level broadening also reflects Te.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2015 Sep 10|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics