Nonlinear optical dynamics in GaN and related materials

A. Shikanai, K. Hazu, T. Sota, K. Suzuki, Y. Kawakami, Sg Fujita

Research output: Contribution to journalConference articlepeer-review

Abstract

The carrier dynamics in InGaN layers and InGaN multiquantum-well (MQW) structures were studied by employing the degenerate pump and probe, time-resolved photoluminescence (PL), and white-light pump and probe measurements. The results from degenerate pump and probe measurements showed that the internal field existed in undoped InGaN but then was screened by the electrons supplied by the Si atoms in Si-doped InGaN. The rise time of PL in InGaN MQW obtained using the upconversion method was very fast, below ips, the mechanism of which is due to the carrier-carrier interaction enhanced by the residual electrons. The OD spectra in InGaN MQW observed in white-light pump and probe measurements indicated that the carrier temperature was substantially higher than the lattice temperature even at 4ops after pulsed photo-pumping. Keywords: quantum confined stark effect, internal field, pump and probe measurement, upconversion method.

Original languageEnglish
Pages (from-to)209-216
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4992
DOIs
Publication statusPublished - 2003 May 30
EventUltrafast Phenomena in Semiconductors VII 2003 - San Jose, United States
Duration: 2003 Jan 252003 Jan 31

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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