Nonpolar AlBN (112̄0) and (11̄00) films grown on SiC substrates

Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Nonpolar AlBN (11 2- 0) and (1 1- 00) films were grown using flow-rate modulation epitaxy. The transmission electron diffraction and lattice image reflect the wurtzite crystal structure of an AlBN (11 2- 0) film. The boron compositions in AlBN (11 2- 0) and (1 1- 00) films (B∼2%), estimated by x-ray diffraction assuming the wurtzite structure, agree well with the compositions measured by secondary ion mass spectroscopy, indicating that boron atoms are incorporated exactly into the wurtzite lattice sites. The (11 2- 0) face is more promising than the (1 1- 00) one for the growth of nonpolar AlBN because it has fewer dangling bonds of nitrogen on the surface.

Original languageEnglish
Article number041914
JournalApplied Physics Letters
Volume91
Issue number4
DOIs
Publication statusPublished - 2007
Externally publishedYes

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wurtzite
boron
epitaxy
x ray diffraction
mass spectroscopy
electron diffraction
flow velocity
modulation
nitrogen
crystal structure
atoms
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nonpolar AlBN (112̄0) and (11̄00) films grown on SiC substrates. / Akasaka, Tetsuya; Kobayashi, Yasuyuki; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 91, No. 4, 041914, 2007.

Research output: Contribution to journalArticle

Akasaka, Tetsuya ; Kobayashi, Yasuyuki ; Makimoto, Toshiki. / Nonpolar AlBN (112̄0) and (11̄00) films grown on SiC substrates. In: Applied Physics Letters. 2007 ; Vol. 91, No. 4.
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