Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

H. Takei, T. Suzuki, Takuro Katsufuji

    Research output: Contribution to journal › Article

    27 Citations (Scopus)

    Abstract

    The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.

    Original languageEnglish
    Article number072506
    JournalApplied Physics Letters
    Volume91
    Issue number7
    DOIs
    Publication statusPublished - 2007

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    vanadates
    spinel
    capacitance
    magnetic fields
    hysteresis

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate. / Takei, H.; Suzuki, T.; Katsufuji, Takuro.

    In: Applied Physics Letters, Vol. 91, No. 7, 072506, 2007.

    Research output: Contribution to journal › Article

    Takei, H, Suzuki, T & Katsufuji, T 2007, 'Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate', Applied Physics Letters, vol. 91, no. 7, 072506. https://doi.org/10.1063/1.2771041
    Takei H, Suzuki T, Katsufuji T. Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate. Applied Physics Letters. 2007;91(7). 072506. https://doi.org/10.1063/1.2771041
    Takei, H. ; Suzuki, T. ; Katsufuji, Takuro. / Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate. In: Applied Physics Letters. 2007 ; Vol. 91, No. 7.
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