Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

H. Takei; T. Suzuki; T. Katsufuji

doi:10.1063/1.2771041

Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

H. Takei^*, T. Suzuki, T. Katsufuji

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.

Original language	English
Article number	072506
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2771041
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2771041

Cite this

@article{1842ec8d798044999939b475d0bfa50a,

title = "Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate",

abstract = "The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.",

author = "H. Takei and T. Suzuki and T. Katsufuji",

note = "Funding Information: This work was partly supported by Grant-in-Aid for Young Scientists (A) from MEXT of Japan and by a Waseda University Grant for Special Research Projects (No. 2005A-502).",

year = "2007",

doi = "10.1063/1.2771041",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

AU - Takei, H.

AU - Suzuki, T.

AU - Katsufuji, T.

N1 - Funding Information: This work was partly supported by Grant-in-Aid for Young Scientists (A) from MEXT of Japan and by a Waseda University Grant for Special Research Projects (No. 2005A-502).

PY - 2007

Y1 - 2007

N2 - The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.

AB - The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.

UR - http://www.scopus.com/inward/record.url?scp=34548028256&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548028256&partnerID=8YFLogxK

U2 - 10.1063/1.2771041

DO - 10.1063/1.2771041

M3 - Article

AN - SCOPUS:34548028256

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 072506

ER -

Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this