Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

H. Takei; T. Suzuki; T. Katsufuji

doi:10.1063/1.2771041

Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

H. Takei, T. Suzuki, T. Katsufuji

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

27 Citations (Scopus)

Abstract

The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.

Original language	English
Article number	072506
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2771041
Publication status	Published - 2007 Aug 24

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Takei, H., Suzuki, T., & Katsufuji, T. (2007). Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate. Applied Physics Letters, 91(7), [072506]. https://doi.org/10.1063/1.2771041

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