Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

H. Takei; T. Suzuki; T. Katsufuji

doi:10.1063/1.2771041

Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

H. Takei, T. Suzuki, T. Katsufuji

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.

Original language	English
Article number	072506
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2771041
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate",

abstract = "The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.",

author = "H. Takei and T. Suzuki and T. Katsufuji",

note = "Funding Information: This work was partly supported by Grant-in-Aid for Young Scientists (A) from MEXT of Japan and by a Waseda University Grant for Special Research Projects (No. 2005A-502).",

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AU - Takei, H.

AU - Suzuki, T.

AU - Katsufuji, T.

N1 - Funding Information: This work was partly supported by Grant-in-Aid for Young Scientists (A) from MEXT of Japan and by a Waseda University Grant for Special Research Projects (No. 2005A-502).

PY - 2007

Y1 - 2007

N2 - The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.

AB - The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.

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Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

Abstract

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