Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage

Yuya Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi, Tetsuya Yamada, Dechen Xu, Masanobu Shibata, Daisuke Matsumura, Yuya Hayashi, Mohd Syamsul, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    34 Citations (Scopus)

    Abstract

    Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage Vth of -2.5 - 4 V.

    Original languageEnglish
    Article number7837668
    Pages (from-to)363-366
    Number of pages4
    JournalIEEE Electron Device Letters
    Volume38
    Issue number3
    DOIs
    Publication statusPublished - 2017 Mar 1

    Fingerprint

    Diamond
    MOSFET devices
    Electric breakdown
    Diamonds
    Hydrogen
    Inversion layers
    Threshold voltage
    Power generation
    Physical properties
    Temperature

    Keywords

    • 2 dimensional hole gas
    • diamond
    • high voltage
    • MOSFETs
    • normally-off
    • wide bandgap semiconductor

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage. / Kitabayashi, Yuya; Kudo, Takuya; Tsuboi, Hidetoshi; Yamada, Tetsuya; Xu, Dechen; Shibata, Masanobu; Matsumura, Daisuke; Hayashi, Yuya; Syamsul, Mohd; Inaba, Masafumi; Hiraiwa, Atsushi; Kawarada, Hiroshi.

    In: IEEE Electron Device Letters, Vol. 38, No. 3, 7837668, 01.03.2017, p. 363-366.

    Research output: Contribution to journalArticle

    Kitabayashi, Y, Kudo, T, Tsuboi, H, Yamada, T, Xu, D, Shibata, M, Matsumura, D, Hayashi, Y, Syamsul, M, Inaba, M, Hiraiwa, A & Kawarada, H 2017, 'Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage', IEEE Electron Device Letters, vol. 38, no. 3, 7837668, pp. 363-366. https://doi.org/10.1109/LED.2017.2661340
    Kitabayashi, Yuya ; Kudo, Takuya ; Tsuboi, Hidetoshi ; Yamada, Tetsuya ; Xu, Dechen ; Shibata, Masanobu ; Matsumura, Daisuke ; Hayashi, Yuya ; Syamsul, Mohd ; Inaba, Masafumi ; Hiraiwa, Atsushi ; Kawarada, Hiroshi. / Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage. In: IEEE Electron Device Letters. 2017 ; Vol. 38, No. 3. pp. 363-366.
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    AU - Tsuboi, Hidetoshi

    AU - Yamada, Tetsuya

    AU - Xu, Dechen

    AU - Shibata, Masanobu

    AU - Matsumura, Daisuke

    AU - Hayashi, Yuya

    AU - Syamsul, Mohd

    AU - Inaba, Masafumi

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