Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al2O3Gate Insulator With Drain Current Density Over 300 mA/mm

Yu Fu, Yuhao Chang, Xiaohua Zhu, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Engineering & Materials Science

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