Novel characterization of implant damage in SiO2 by nuclear-deposited energy

A. Hiraiwa; H. Usui; K. Yagi

doi:10.1063/1.101429

Novel characterization of implant damage in SiO₂ by nuclear-deposited energy

A. Hiraiwa^*, H. Usui, K. Yagi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Etching enhancement in through-implanted SiO₂ has been characterized by nuclear-deposited energy independently of implant conditions. An empirical expression has been proposed to describe the etching rate for any implantation. The enhanced etching has been related to the Si-O vibrational frequency shift. Etching enhancement has been found to reflect the structural change in SiO₂, and to be a good measure of degradation. The structural change of SiO₂ stops and the etching rate reaches a maximum for an ion dose corresponding to nuclear-deposited energy larger than 3.4×10²³ eV/cm³. This energy is equal to the total SiO bonding energy (3.8 eV) in a unit volume of SiO₂.

Original language	English
Pages (from-to)	1106-1108
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	12
DOIs	https://doi.org/10.1063/1.101429
Publication status	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Novel characterization of implant damage in SiO2 by nuclear-deposited energy",

abstract = "Etching enhancement in through-implanted SiO2 has been characterized by nuclear-deposited energy independently of implant conditions. An empirical expression has been proposed to describe the etching rate for any implantation. The enhanced etching has been related to the Si-O vibrational frequency shift. Etching enhancement has been found to reflect the structural change in SiO2, and to be a good measure of degradation. The structural change of SiO2 stops and the etching rate reaches a maximum for an ion dose corresponding to nuclear-deposited energy larger than 3.4×1023 eV/cm3. This energy is equal to the total SiO bonding energy (3.8 eV) in a unit volume of SiO2.",

author = "A. Hiraiwa and H. Usui and K. Yagi",

year = "1989",

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AU - Hiraiwa, A.

AU - Usui, H.

AU - Yagi, K.

PY - 1989

Y1 - 1989

N2 - Etching enhancement in through-implanted SiO2 has been characterized by nuclear-deposited energy independently of implant conditions. An empirical expression has been proposed to describe the etching rate for any implantation. The enhanced etching has been related to the Si-O vibrational frequency shift. Etching enhancement has been found to reflect the structural change in SiO2, and to be a good measure of degradation. The structural change of SiO2 stops and the etching rate reaches a maximum for an ion dose corresponding to nuclear-deposited energy larger than 3.4×1023 eV/cm3. This energy is equal to the total SiO bonding energy (3.8 eV) in a unit volume of SiO2.

AB - Etching enhancement in through-implanted SiO2 has been characterized by nuclear-deposited energy independently of implant conditions. An empirical expression has been proposed to describe the etching rate for any implantation. The enhanced etching has been related to the Si-O vibrational frequency shift. Etching enhancement has been found to reflect the structural change in SiO2, and to be a good measure of degradation. The structural change of SiO2 stops and the etching rate reaches a maximum for an ion dose corresponding to nuclear-deposited energy larger than 3.4×1023 eV/cm3. This energy is equal to the total SiO bonding energy (3.8 eV) in a unit volume of SiO2.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Novel characterization of implant damage in SiO₂ by nuclear-deposited energy

Abstract

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