Novel characterization of implant damage in SiO2 by nuclear-deposited energy

A. Hiraiwa, H. Usui, K. Yagi

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25 Citations (Scopus)

Abstract

Etching enhancement in through-implanted SiO2 has been characterized by nuclear-deposited energy independently of implant conditions. An empirical expression has been proposed to describe the etching rate for any implantation. The enhanced etching has been related to the Si-O vibrational frequency shift. Etching enhancement has been found to reflect the structural change in SiO2, and to be a good measure of degradation. The structural change of SiO2 stops and the etching rate reaches a maximum for an ion dose corresponding to nuclear-deposited energy larger than 3.4×1023 eV/cm3. This energy is equal to the total SiO bonding energy (3.8 eV) in a unit volume of SiO2.

Original languageEnglish
Pages (from-to)1106-1108
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number12
DOIs
Publication statusPublished - 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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