Novel CMOS structure with polysilicon source/drain (PSD) transistors by self-aligned silicidation

Masahiro Shimizu, Takehisa Yamaguchi, Masahide Inuishi, Katsuhiro Tsukamoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A novel CMOS structure has been developed using Ti-salicide PSD transistor formed by a new self-aligned method. Both N-channel and P-channel PSD transistors exhibit excellent short-channel behaviors down to the sub-half-micrometer region with shallow S/D junctions formed by dopant diffusion from polysilicons. New salicide process has been developed for the PSD structure and can effectively reduce the sheet resistances of the S/D polysilicon and the polysilicon gate to as low as 4 to approximately 5 Ω/□. As a result, the low resistive local interconnects can be successfully implemented by the Ti-salicide S/D polysilicon merged with contacts by self-alignment. Moreover it is found that shallow Ti-salicide S/D junctions with the PSD structure can achieve approximately 1 to approximately 2 orders of magnitude lower area leakage current than that of the conventional implanted S/D junctions by eliminating implanted damage and preventing penetration of silicide into junctions with the elevated structure of S/D polysilicon layer. Furthermore CMOS ring oscillators having PSD transistors with an effective channel length of 0.4 μm were fabricated using the salicided S/D polysilicon as a local interconnect between the N+ and the P+ regions, and successfully operated with a propagation delay time of 50 ps/stage at a supply voltage of 5 V.

Original languageEnglish
Pages (from-to)532-540
Number of pages9
JournalIEICE Transactions on Electronics
VolumeE76-C
Issue number4
Publication statusPublished - 1993 Apr
Externally publishedYes

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Polysilicon
Transistors
Sheet resistance
Leakage currents
Time delay
Doping (additives)
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Novel CMOS structure with polysilicon source/drain (PSD) transistors by self-aligned silicidation. / Shimizu, Masahiro; Yamaguchi, Takehisa; Inuishi, Masahide; Tsukamoto, Katsuhiro.

In: IEICE Transactions on Electronics, Vol. E76-C, No. 4, 04.1993, p. 532-540.

Research output: Contribution to journalArticle

Shimizu, Masahiro ; Yamaguchi, Takehisa ; Inuishi, Masahide ; Tsukamoto, Katsuhiro. / Novel CMOS structure with polysilicon source/drain (PSD) transistors by self-aligned silicidation. In: IEICE Transactions on Electronics. 1993 ; Vol. E76-C, No. 4. pp. 532-540.
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