Novel double well with buffer N- and P+ gettering layers for suppression of soft error rate (DOWNSER)

S. Komori*, T. Yamashita, T. Kuroi, M. Inuishi, N. Tsubouchi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


A novel double well with buffer n- and gettering layers structure for strong suppression of SER (DOWNSER) is briefly presented in this paper. The mechanisms for reduction of SER have been investigated by experimental and simulation studies. The buffer n- and the gettering layer in DOWNSER structure play the important role in cutting off the minority carrier generated from the incident alpha particle in the p-type region or the reverse biased junction.

Original languageEnglish
Pages (from-to)41-42
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1994 Dec 1
Externally publishedYes
EventProceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1994 Jun 71994 Jun 9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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