Novel functionality and material for Si-photonics: Two-photon absorption switching and antimonide hetero-genius epitaxy

Tak Keung Liang, Kouichi Akahane, Naokatsu Yamamoto, Luis Romeu Nunes, Tetsuya Kawanishi, Masahiro Tsuchiya

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 μm at room temperature, so that the new function can be developed on Si-photonics using this QW.

Original languageEnglish
Pages (from-to)409-414
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE90-C
Issue number2
DOIs
Publication statusPublished - 2007 Feb
Externally publishedYes

Keywords

  • Gallium antimonide
  • Heteroepitaxy
  • Optical switch
  • Photonic devices
  • Silicon photonics
  • Two-photon absorption

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Novel functionality and material for Si-photonics: Two-photon absorption switching and antimonide hetero-genius epitaxy'. Together they form a unique fingerprint.

  • Cite this