Novel NICE (Nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0. 25μm dual gate CMOS

T. Kuroi, T. Yamaguchi, M. Shirahata, Y. Okumura, Y. Kawasaki, Masahide Inuishi, B. Tsubouchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We have proposed a novel structure with high reliability and high performance by nitrogen implantation into gate electrode and source-drain region for 0.25 μm dual gate CMOS. It was founded that the hot carrier resistance of both N-ch and P-ch MOSFETs can be effectively improved by incorporating nitrogen into the gate oxide with nitrogen implantation on the poly silicon gate. Moreover it was founded that Ti-salicided shallow junction for 0.25 μm CMOS can be successfully formed without increasing the junction leakage current.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages324-328
Number of pages5
ISBN (Print)0780314506
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 1993 Dec 51993 Dec 8

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period93/12/593/12/8

Fingerprint

Nitrogen
Electrodes
Hot carriers
Leakage currents
Silicon
Oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kuroi, T., Yamaguchi, T., Shirahata, M., Okumura, Y., Kawasaki, Y., Inuishi, M., & Tsubouchi, B. (1993). Novel NICE (Nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0. 25μm dual gate CMOS. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 324-328). Publ by IEEE.

Novel NICE (Nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0. 25μm dual gate CMOS. / Kuroi, T.; Yamaguchi, T.; Shirahata, M.; Okumura, Y.; Kawasaki, Y.; Inuishi, Masahide; Tsubouchi, B.

Technical Digest - International Electron Devices Meeting. ed. / Anon. Publ by IEEE, 1993. p. 324-328.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kuroi, T, Yamaguchi, T, Shirahata, M, Okumura, Y, Kawasaki, Y, Inuishi, M & Tsubouchi, B 1993, Novel NICE (Nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0. 25μm dual gate CMOS. in Anon (ed.), Technical Digest - International Electron Devices Meeting. Publ by IEEE, pp. 324-328, Proceedings of the 1993 IEEE International Electron Devices Meeting, Washington, DC, USA, 93/12/5.
Kuroi T, Yamaguchi T, Shirahata M, Okumura Y, Kawasaki Y, Inuishi M et al. Novel NICE (Nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0. 25μm dual gate CMOS. In Anon, editor, Technical Digest - International Electron Devices Meeting. Publ by IEEE. 1993. p. 324-328
Kuroi, T. ; Yamaguchi, T. ; Shirahata, M. ; Okumura, Y. ; Kawasaki, Y. ; Inuishi, Masahide ; Tsubouchi, B. / Novel NICE (Nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0. 25μm dual gate CMOS. Technical Digest - International Electron Devices Meeting. editor / Anon. Publ by IEEE, 1993. pp. 324-328
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