Novel NICE (Nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0. 25μm dual gate CMOS

T. Kuroi, T. Yamaguchi, M. Shirahata, Y. Okumura, Y. Kawasaki, M. Inuishi, B. Tsubouchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We have proposed a novel structure with high reliability and high performance by nitrogen implantation into gate electrode and source-drain region for 0.25 μm dual gate CMOS. It was founded that the hot carrier resistance of both N-ch and P-ch MOSFETs can be effectively improved by incorporating nitrogen into the gate oxide with nitrogen implantation on the poly silicon gate. Moreover it was founded that Ti-salicided shallow junction for 0.25 μm CMOS can be successfully formed without increasing the junction leakage current.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages324-328
Number of pages5
ISBN (Print)0780314506
Publication statusPublished - 1993 Dec 1
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 1993 Dec 51993 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period93/12/593/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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