Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High Performance 0.25 μm Dual Gate CMOS

T. Kuroi; T. Yamaguchi; M. Shirahata; Y. Okumura; Y. Kawasaki; M. Inuishi; N. Tsubouchi

Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High Performance 0.25 μm Dual Gate CMOS

T. Kuroi, T. Yamaguchi, M. Shirahata, Y. Okumura, Y. Kawasaki, M. Inuishi, N. Tsubouchi

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have proposed a novel structure with high reliability and high performance by nitrogen implantation into gate electrode and source-drain region for 0.2S μm dual gate CMOS. It was founded that the hot carrier resistance of both N-ch and P-ch MOSFETs can be effectively improved by incorporating nitrogen into the gate oxide with nitrogen implantation on the poly silicon gate. Moreover it was founded that Ti-salicided shallow junction for 0.2S μm CMOS can be successfully formed without increasing the junction leakage current

Original language	English
Pages (from-to)	325-328
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 1993
Externally published	Yes
Event	Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: 1993 Dec 5 → 1993 Dec 8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High Performance 0.25 μm Dual Gate CMOS",

abstract = "We have proposed a novel structure with high reliability and high performance by nitrogen implantation into gate electrode and source-drain region for 0.2S μm dual gate CMOS. It was founded that the hot carrier resistance of both N-ch and P-ch MOSFETs can be effectively improved by incorporating nitrogen into the gate oxide with nitrogen implantation on the poly silicon gate. Moreover it was founded that Ti-salicided shallow junction for 0.2S μm CMOS can be successfully formed without increasing the junction leakage current ",

author = "T. Kuroi and T. Yamaguchi and M. Shirahata and Y. Okumura and Y. Kawasaki and M. Inuishi and N. Tsubouchi",

note = "Publisher Copyright: {\textcopyright} 1993 IEEE.; Proceedings of the 1993 IEEE International Electron Devices Meeting ; Conference date: 05-12-1993 Through 08-12-1993",

year = "1993",

language = "English",

pages = "325--328",

journal = "Technical Digest - International Electron Devices Meeting",

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TY - JOUR

T1 - Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High Performance 0.25 μm Dual Gate CMOS

AU - Kuroi, T.

AU - Yamaguchi, T.

AU - Shirahata, M.

AU - Okumura, Y.

AU - Kawasaki, Y.

AU - Inuishi, M.

AU - Tsubouchi, N.

PY - 1993

Y1 - 1993

N2 - We have proposed a novel structure with high reliability and high performance by nitrogen implantation into gate electrode and source-drain region for 0.2S μm dual gate CMOS. It was founded that the hot carrier resistance of both N-ch and P-ch MOSFETs can be effectively improved by incorporating nitrogen into the gate oxide with nitrogen implantation on the poly silicon gate. Moreover it was founded that Ti-salicided shallow junction for 0.2S μm CMOS can be successfully formed without increasing the junction leakage current

AB - We have proposed a novel structure with high reliability and high performance by nitrogen implantation into gate electrode and source-drain region for 0.2S μm dual gate CMOS. It was founded that the hot carrier resistance of both N-ch and P-ch MOSFETs can be effectively improved by incorporating nitrogen into the gate oxide with nitrogen implantation on the poly silicon gate. Moreover it was founded that Ti-salicided shallow junction for 0.2S μm CMOS can be successfully formed without increasing the junction leakage current

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UR - http://www.scopus.com/inward/citedby.url?scp=0027813428&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0027813428

SN - 0163-1918

SP - 325

EP - 328

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1993 IEEE International Electron Devices Meeting

Y2 - 5 December 1993 through 8 December 1993

ER -

Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High Performance 0.25 μm Dual Gate CMOS

Abstract

ASJC Scopus subject areas

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