Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High Performance 0.25 μm Dual Gate CMOS

Physics & Astronomy

• CMOS 96%
• implantation 95%
• nitrogen 79%
• electrodes 66%
• performance 47%
• leakage 22%
• field effect transistors 21%
• oxides 16%
• silicon 14%

Engineering & Materials Science

• Nitrogen 100%
• Electrodes 82%
• Hot carriers 72%
• Nitrogen oxides 64%
• Leakage currents 58%
• Silicon 42%

Chemical Compounds

• Nitrogen 65%
• Behavior as Electrode 54%
• Leakage Current 47%
• Resistance 22%
• Oxide 19%