Novel nitride semiconductor devices

Research output: Contribution to journalArticle

Abstract

Nitride semiconductors are best known as materials for blue light emitting diodes, but they have unique characteristics applicable to other devices. This paper describes three such novel nitride devices that NTT Basic Research Laboratories has developed: (1) a nitride heterojunction bipolar transistor, which shows a very-high power density of 270,000 W/cm2, (2) a nitride field emission display, which is promising for an efficient, reliable, and bright flat panel display, and (3) a nitride surface emitting laser diode, which should lead to micro optical devices and optoelectronic integrated circuits.

Original languageEnglish
Pages (from-to)12-18
Number of pages7
JournalNTT Technical Review
Volume2
Issue number6
Publication statusPublished - 2004 Jun
Externally publishedYes

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Semiconductor devices
Nitrides
Field emission displays
Integrated optoelectronics
Flat panel displays
Surface emitting lasers
Heterojunction bipolar transistors
Research laboratories
Optical devices
Light emitting diodes
Semiconductor lasers
Semiconductor materials

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Novel nitride semiconductor devices. / Makimoto, Toshiki.

In: NTT Technical Review, Vol. 2, No. 6, 06.2004, p. 12-18.

Research output: Contribution to journalArticle

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