Abstract
Nitride semiconductors are best known as materials for blue light emitting diodes, but they have unique characteristics applicable to other devices. This paper describes three such novel nitride devices that NTT Basic Research Laboratories has developed: (1) a nitride heterojunction bipolar transistor, which shows a very-high power density of 270,000 W/cm2, (2) a nitride field emission display, which is promising for an efficient, reliable, and bright flat panel display, and (3) a nitride surface emitting laser diode, which should lead to micro optical devices and optoelectronic integrated circuits.
| Original language | English |
|---|---|
| Pages (from-to) | 12-18 |
| Number of pages | 7 |
| Journal | NTT Technical Review |
| Volume | 2 |
| Issue number | 6 |
| Publication status | Published - 2004 Jun 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Computer Science Applications
- Computer Networks and Communications
- Electrical and Electronic Engineering