Novel optical features in Cd+ ion-implanted LEC-grown GaAs

Yoko Kawasumi, Shinji Kimura, Tsutomu Iida, Akira Obara, Hajime Shibata, Naoto Kobayashi, Takeyo Tsukamoto, Yunosuke Makita

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

High-energy Cd+ ions were implanted into undoped GaAs grown by the liquid encapsulated Czochralski (LEC) method for a wide Cd concentration, [Cd] between 1 × 1016 and 3 × 1021 cm-3. Raman scattering spectra indicate that for [Cd] lower than 1.7 × 1018 cm-3, the damage induced by high-energy ion-implantation can be eliminated by high-temperature annealing. For [Cd] higher than 3 × 1018 cm-3, the intensity of the LO-phonon mode gradually reduces and its width significantly broadens with increasing [Cd]. For [Cd] = 1 × 1021 and 3 × 1021cm-3, a forbidden mode appears on the lower-frequency side of the LO-phonon mode. The results of Rutherford backscattering spectrometry (RBS), and Hall-effect measurements suggest that a solid solution of Cd in GaAs is formed in this high-concentration region. 2 K photoluminescence (PL) spectra indicate that four emissions related with acceptor-acceptor pairs, [g-g], [g-g]2, [g-g]3, and [g-g]β are formed in the near band-edge region even by using LEC-GaAs as a substrate. In the energy region far below the band-edge, many emissions associated with vacancies and complexes with doped Cd atoms are produced specifically for high [Cd].

Original languageEnglish
Pages (from-to)466-470
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume106
Issue number1-4
DOIs
Publication statusPublished - 1995 Dec 2
Externally publishedYes

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Crystal growth from melt
Hall effect
Ions
Rutherford backscattering spectroscopy
Liquids
liquids
Ion implantation
Spectrometry
Vacancies
Raman scattering
Solid solutions
Photoluminescence
ions
Czochralski method
Annealing
Atoms
ion implantation
energy
backscattering
solid solutions

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

Novel optical features in Cd+ ion-implanted LEC-grown GaAs. / Kawasumi, Yoko; Kimura, Shinji; Iida, Tsutomu; Obara, Akira; Shibata, Hajime; Kobayashi, Naoto; Tsukamoto, Takeyo; Makita, Yunosuke.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 106, No. 1-4, 02.12.1995, p. 466-470.

Research output: Contribution to journalArticle

Kawasumi, Y, Kimura, S, Iida, T, Obara, A, Shibata, H, Kobayashi, N, Tsukamoto, T & Makita, Y 1995, 'Novel optical features in Cd+ ion-implanted LEC-grown GaAs', Nuclear Inst. and Methods in Physics Research, B, vol. 106, no. 1-4, pp. 466-470. https://doi.org/10.1016/0168-583X(95)00754-7
Kawasumi, Yoko ; Kimura, Shinji ; Iida, Tsutomu ; Obara, Akira ; Shibata, Hajime ; Kobayashi, Naoto ; Tsukamoto, Takeyo ; Makita, Yunosuke. / Novel optical features in Cd+ ion-implanted LEC-grown GaAs. In: Nuclear Inst. and Methods in Physics Research, B. 1995 ; Vol. 106, No. 1-4. pp. 466-470.
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