A poly-Si S/D transistor with self-aligned titanium silicidation has been developed without a sidewall spacer. It has excellent electrical characteristics and the transistor performance is improved by the reduction of poly-Si resistance. The effects of etching damage of the active channel regions on the transistor characteristics are investigated. It is concluded that the etching damage is removed by sacrifice oxidation of 20 nm.
|Number of pages||2|
|Publication status||Published - 1988|
ASJC Scopus subject areas
- Electrical and Electronic Engineering