Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching

Meishoku Koh, Tomomi Goto, Atsushi Sugita, Takashi Tanii, Tomoyuki Iida, Takahiro Shinada, Takashi Matsukawa, Iwao Ohdomari

Research output: Contribution to journalArticle

16 Citations (Scopus)


A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).

Original languageEnglish
Pages (from-to)2837-2839
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2001 Apr 1



  • Dopant ion implantation
  • Field emitter
  • HF
  • Hydrazine
  • Nanopyramid array
  • Si
  • SiO
  • Wet etching

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this