Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching

Meishoku Koh, Tomomi Goto, Atsushi Sugita, Takashi Tanii, Tomoyuki Iida, Takahiro Shinada, Takashi Matsukawa, Iwao Ohdomari

    Research output: Contribution to journalArticle

    17 Citations (Scopus)

    Abstract

    A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).

    Original languageEnglish
    Pages (from-to)2837-2839
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume40
    Issue number4 B
    Publication statusPublished - 2001 Apr

    Fingerprint

    Wet etching
    Ion implantation
    ion implantation
    Doping (additives)
    etching
    Fabrication
    Etching
    fabrication
    Hydrazine
    Ions
    hydrazines
    dipping
    ions
    phosphorus
    Phosphorus
    Microscopic examination
    Electric properties
    electrical properties
    Throughput
    microscopy

    Keywords

    • Dopant ion implantation
    • Field emitter
    • HF
    • Hydrazine
    • Nanopyramid array
    • Si
    • SiO
    • Wet etching

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching. / Koh, Meishoku; Goto, Tomomi; Sugita, Atsushi; Tanii, Takashi; Iida, Tomoyuki; Shinada, Takahiro; Matsukawa, Takashi; Ohdomari, Iwao.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 4 B, 04.2001, p. 2837-2839.

    Research output: Contribution to journalArticle

    Koh, Meishoku ; Goto, Tomomi ; Sugita, Atsushi ; Tanii, Takashi ; Iida, Tomoyuki ; Shinada, Takahiro ; Matsukawa, Takashi ; Ohdomari, Iwao. / Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2001 ; Vol. 40, No. 4 B. pp. 2837-2839.
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    AU - Tanii, Takashi

    AU - Iida, Tomoyuki

    AU - Shinada, Takahiro

    AU - Matsukawa, Takashi

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