Novel shallow trench isolation process from viewpoint of total strain process design for 45 nm node devices and beyond

Masato Ishibashi, Katsuyuki Horita, Mahito Sawada, Masashi Kitazawa, Motoshige Igarashi, Takashi Kuroi, Takahisa Eimori, Kiyoteru Kobayashi, Masahide Inuishi, Yuzuru Ohji

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12 Citations (Scopus)


In this paper, a novel shallow trench isolation (STI) process is proposed for 45 nm node technologies and beyond. The major features of this process are the use of a fluorine-doped (F-doped) SiO2 film for gap filling and high-temperature rapid thermal oxidation (HT-RTO) for gate oxidation. Voidless filling of a narrow trench can be realized by F-doped high-density plasma chemical vapor deposition (F-doped HDP-CVD). Moreover, electron mobility degradation caused by STI stress and junction leakage currents can be minimized using F-doped HDP-CVD with HT-RTO. It was also confirmed that compressive stress in the F-doped HDP-CVD sample is smaller in every measurement point around STI than that in the conventional HDP-CVD sample by convergent-beam electron diffraction (CBED). The Si-F bonds in the oxide film play a very important role in stress reduction. By utilizing HT-RTO, Si-F bonds remain and make the SiO2 film in the trench coarse. This technique is a very promising 45 nm node STI scheme with high performance and high reliability.

Original languageEnglish
Pages (from-to)2152-2156
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2005 Apr
Externally publishedYes



  • Fluorine-doped hdp-cvd
  • Junction leakage current
  • Mobility
  • Shallow trench isolation
  • Stress

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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