Nucleation of Cu2Te layer by a closed space sublimation method toward the growth of Te based chalcopyrite

Yohei Sakurakawa, Aya Uruno, Masakazu Kobayashi

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    3 Citations (Scopus)

    Abstract

    Nucleation of Cu-Te layers was performed by the closed space sublimation method using various source materials, source temperatures, and Si substrates with different surface orientations. The objective was to produce nuclei layers with high quality for use as nucleation centers for CuGaTe2. The grown samples were evaluated by x-ray diffraction and scanning electron microscopy. Cu2Te deposits were obtained using either a CuTe or Cu2Te source, but the latter gave a higher area coverage of Cu2Te nuclei. Highly oriented nuclei were obtained when they were grown on Si (001) at a source temperature of 640 °C and substrate temperature of 590 °C. When the source temperature was raised to 750 °C and the corresponding substrate temperature was 700 °C, nonuniform but highly oriented nuclei were obtained. Both nuclei layers exhibited a strong preference for (0001) orientation. The crystallographic features of the Cu2Te nuclei formed on Si (111) were similar to those of the Cu2Te nuclei formed on Si (001).

    Original languageEnglish
    Article number04F106
    JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
    Volume35
    Issue number4
    DOIs
    Publication statusPublished - 2017 Jul 1

    Fingerprint

    Sublimation
    sublimation
    Nucleation
    nucleation
    nuclei
    Substrates
    Temperature
    temperature
    Deposits
    Diffraction
    chalcopyrite
    X rays
    Scanning electron microscopy
    x ray diffraction
    deposits
    scanning electron microscopy

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Instrumentation
    • Process Chemistry and Technology
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Cite this

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    title = "Nucleation of Cu2Te layer by a closed space sublimation method toward the growth of Te based chalcopyrite",
    abstract = "Nucleation of Cu-Te layers was performed by the closed space sublimation method using various source materials, source temperatures, and Si substrates with different surface orientations. The objective was to produce nuclei layers with high quality for use as nucleation centers for CuGaTe2. The grown samples were evaluated by x-ray diffraction and scanning electron microscopy. Cu2Te deposits were obtained using either a CuTe or Cu2Te source, but the latter gave a higher area coverage of Cu2Te nuclei. Highly oriented nuclei were obtained when they were grown on Si (001) at a source temperature of 640 °C and substrate temperature of 590 °C. When the source temperature was raised to 750 °C and the corresponding substrate temperature was 700 °C, nonuniform but highly oriented nuclei were obtained. Both nuclei layers exhibited a strong preference for (0001) orientation. The crystallographic features of the Cu2Te nuclei formed on Si (111) were similar to those of the Cu2Te nuclei formed on Si (001).",
    author = "Yohei Sakurakawa and Aya Uruno and Masakazu Kobayashi",
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    TY - JOUR

    T1 - Nucleation of Cu2Te layer by a closed space sublimation method toward the growth of Te based chalcopyrite

    AU - Sakurakawa, Yohei

    AU - Uruno, Aya

    AU - Kobayashi, Masakazu

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    N2 - Nucleation of Cu-Te layers was performed by the closed space sublimation method using various source materials, source temperatures, and Si substrates with different surface orientations. The objective was to produce nuclei layers with high quality for use as nucleation centers for CuGaTe2. The grown samples were evaluated by x-ray diffraction and scanning electron microscopy. Cu2Te deposits were obtained using either a CuTe or Cu2Te source, but the latter gave a higher area coverage of Cu2Te nuclei. Highly oriented nuclei were obtained when they were grown on Si (001) at a source temperature of 640 °C and substrate temperature of 590 °C. When the source temperature was raised to 750 °C and the corresponding substrate temperature was 700 °C, nonuniform but highly oriented nuclei were obtained. Both nuclei layers exhibited a strong preference for (0001) orientation. The crystallographic features of the Cu2Te nuclei formed on Si (111) were similar to those of the Cu2Te nuclei formed on Si (001).

    AB - Nucleation of Cu-Te layers was performed by the closed space sublimation method using various source materials, source temperatures, and Si substrates with different surface orientations. The objective was to produce nuclei layers with high quality for use as nucleation centers for CuGaTe2. The grown samples were evaluated by x-ray diffraction and scanning electron microscopy. Cu2Te deposits were obtained using either a CuTe or Cu2Te source, but the latter gave a higher area coverage of Cu2Te nuclei. Highly oriented nuclei were obtained when they were grown on Si (001) at a source temperature of 640 °C and substrate temperature of 590 °C. When the source temperature was raised to 750 °C and the corresponding substrate temperature was 700 °C, nonuniform but highly oriented nuclei were obtained. Both nuclei layers exhibited a strong preference for (0001) orientation. The crystallographic features of the Cu2Te nuclei formed on Si (111) were similar to those of the Cu2Te nuclei formed on Si (001).

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