Nucleation of Ga2O3 nanocrystals in the K2O-Ga2O3-SiO2 glass system

R. Ceccato, R. Dal Maschio, S. Gialanella, G. Mariotto, M. Montagna, F. Rossi, M. Ferrari, K. E. Lipinska-Kalita, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    33 Citations (Scopus)

    Abstract

    A multitechnique approach, consisting of x-ray diffraction, differential thermal analysis, low frequency Raman scattering from the acoustic vibrations of nanoclusters, and transmission electron microscopy associated with selected area diffraction, has been used to study the nucleation and crystallization processes in SiO2-Ga2O3-K2O glasses. The specific aim was to determine the structure and the size distribution of nanoparticles embedded in the glass matrix. It has been found that nearly spherical nanocrystals of β-Ga2O3, with a size of ∼2-3 nm, nucleate during thermal treatments at 900°C. Crystallization was observed after annealing at higher temperature. The amount of the crystalline phase and the mean size of the nanocrystals increased with heat treatment, time and temperature. β-Ga2O3 was the only crystalline phase to appear in all glass samples.

    Original languageEnglish
    Pages (from-to)2522-2527
    Number of pages6
    JournalJournal of Applied Physics
    Volume90
    Issue number5
    DOIs
    Publication statusPublished - 2001 Sep 1

    Fingerprint

    nanocrystals
    nucleation
    glass
    crystallization
    nanoclusters
    sound waves
    thermal analysis
    x ray diffraction
    heat treatment
    Raman spectra
    low frequencies
    nanoparticles
    transmission electron microscopy
    annealing
    matrices
    diffraction
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Ceccato, R., Dal Maschio, R., Gialanella, S., Mariotto, G., Montagna, M., Rossi, F., ... Ohki, Y. (2001). Nucleation of Ga2O3 nanocrystals in the K2O-Ga2O3-SiO2 glass system. Journal of Applied Physics, 90(5), 2522-2527. https://doi.org/10.1063/1.1365426

    Nucleation of Ga2O3 nanocrystals in the K2O-Ga2O3-SiO2 glass system. / Ceccato, R.; Dal Maschio, R.; Gialanella, S.; Mariotto, G.; Montagna, M.; Rossi, F.; Ferrari, M.; Lipinska-Kalita, K. E.; Ohki, Yoshimichi.

    In: Journal of Applied Physics, Vol. 90, No. 5, 01.09.2001, p. 2522-2527.

    Research output: Contribution to journalArticle

    Ceccato, R, Dal Maschio, R, Gialanella, S, Mariotto, G, Montagna, M, Rossi, F, Ferrari, M, Lipinska-Kalita, KE & Ohki, Y 2001, 'Nucleation of Ga2O3 nanocrystals in the K2O-Ga2O3-SiO2 glass system', Journal of Applied Physics, vol. 90, no. 5, pp. 2522-2527. https://doi.org/10.1063/1.1365426
    Ceccato R, Dal Maschio R, Gialanella S, Mariotto G, Montagna M, Rossi F et al. Nucleation of Ga2O3 nanocrystals in the K2O-Ga2O3-SiO2 glass system. Journal of Applied Physics. 2001 Sep 1;90(5):2522-2527. https://doi.org/10.1063/1.1365426
    Ceccato, R. ; Dal Maschio, R. ; Gialanella, S. ; Mariotto, G. ; Montagna, M. ; Rossi, F. ; Ferrari, M. ; Lipinska-Kalita, K. E. ; Ohki, Yoshimichi. / Nucleation of Ga2O3 nanocrystals in the K2O-Ga2O3-SiO2 glass system. In: Journal of Applied Physics. 2001 ; Vol. 90, No. 5. pp. 2522-2527.
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