Nucleation of tungsten by chemical vapor deposition from WF6 and SiH4

Y. Kajikawa, T. Tsumura, Suguru Noda, H. Komiyama, Y. Shimogaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we investigated the nucleation process of W from WF6 and SiH4by using a cold wall-type CVD reactor. W was then deposited from WF6(0.42vol%)SiHsub 4(0.42vol%) H2 (33vol%)Ar at 5 Torr. TiN substrates were heated up under Ar atmosphere and hold at 673 K for 20 min under 35 vol% H2Ar atmosphere at 5 Torr. The surface states was monitored in-situ by using field emission scanning electron microscopy (FESEM), micro Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS).

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages256-257
Number of pages2
ISBN (Electronic)4891140402, 9784891140403
DOIs
Publication statusPublished - 2003
Externally publishedYes
EventInternational Microprocesses and Nanotechnology Conference, MNC 2003 - Tokyo, Japan
Duration: 2003 Oct 292003 Oct 31

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2003
CountryJapan
CityTokyo
Period03/10/2903/10/31

Fingerprint

Surface states
Auger electron spectroscopy
Field emission
Tungsten
Chemical vapor deposition
Nucleation
X ray photoelectron spectroscopy
Scanning electron microscopy
Substrates

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kajikawa, Y., Tsumura, T., Noda, S., Komiyama, H., & Shimogaki, Y. (2003). Nucleation of tungsten by chemical vapor deposition from WF6 and SiH4 In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003 (pp. 256-257). [1268743] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2003.1268743

Nucleation of tungsten by chemical vapor deposition from WF6 and SiH4 . / Kajikawa, Y.; Tsumura, T.; Noda, Suguru; Komiyama, H.; Shimogaki, Y.

Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 256-257 1268743.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kajikawa, Y, Tsumura, T, Noda, S, Komiyama, H & Shimogaki, Y 2003, Nucleation of tungsten by chemical vapor deposition from WF6 and SiH4 in Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003., 1268743, Institute of Electrical and Electronics Engineers Inc., pp. 256-257, International Microprocesses and Nanotechnology Conference, MNC 2003, Tokyo, Japan, 03/10/29. https://doi.org/10.1109/IMNC.2003.1268743
Kajikawa Y, Tsumura T, Noda S, Komiyama H, Shimogaki Y. Nucleation of tungsten by chemical vapor deposition from WF6 and SiH4 In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 256-257. 1268743 https://doi.org/10.1109/IMNC.2003.1268743
Kajikawa, Y. ; Tsumura, T. ; Noda, Suguru ; Komiyama, H. ; Shimogaki, Y. / Nucleation of tungsten by chemical vapor deposition from WF6 and SiH4 Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 256-257
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