Abstract
Oxygen dissolution in titanium during oxidation is simulated with oxide/metal interface migration using a finite volume method. In this simulation, the oxidation rate resulting from both oxide growth and oxygen penetration into a metal are taken into account. The results show the temperature dependency of oxygen concentration at the oxide/metal interface in the metal, which is about 21 at% up to 600°C, and increases drastically to the oxygen solubility limit at temperatures above 600°C. This suggests that high stress due to the oxygen penetration may develop in the metal near the interface. This stress distribution could be dependent on temperature according to the relation between oxygen content and lattice parameters.
| Original language | English |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 160 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2013 Aug 20 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
Cite this
Numerical analysis of oxygen transport in alpha titanium during isothermal oxidation. / Kitashima, T.; Liu, L. J.; Murakami, Hideyuki.
In: Journal of the Electrochemical Society, Vol. 160, No. 9, 20.08.2013.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Numerical analysis of oxygen transport in alpha titanium during isothermal oxidation
AU - Kitashima, T.
AU - Liu, L. J.
AU - Murakami, Hideyuki
PY - 2013/8/20
Y1 - 2013/8/20
N2 - Oxygen dissolution in titanium during oxidation is simulated with oxide/metal interface migration using a finite volume method. In this simulation, the oxidation rate resulting from both oxide growth and oxygen penetration into a metal are taken into account. The results show the temperature dependency of oxygen concentration at the oxide/metal interface in the metal, which is about 21 at% up to 600°C, and increases drastically to the oxygen solubility limit at temperatures above 600°C. This suggests that high stress due to the oxygen penetration may develop in the metal near the interface. This stress distribution could be dependent on temperature according to the relation between oxygen content and lattice parameters.
AB - Oxygen dissolution in titanium during oxidation is simulated with oxide/metal interface migration using a finite volume method. In this simulation, the oxidation rate resulting from both oxide growth and oxygen penetration into a metal are taken into account. The results show the temperature dependency of oxygen concentration at the oxide/metal interface in the metal, which is about 21 at% up to 600°C, and increases drastically to the oxygen solubility limit at temperatures above 600°C. This suggests that high stress due to the oxygen penetration may develop in the metal near the interface. This stress distribution could be dependent on temperature according to the relation between oxygen content and lattice parameters.
UR - http://www.scopus.com/inward/record.url?scp=84881509984&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84881509984&partnerID=8YFLogxK
U2 - 10.1149/2.100309jes
DO - 10.1149/2.100309jes
M3 - Article
AN - SCOPUS:84881509984
VL - 160
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 9
ER -