Abstract
Oxygen dissolution in titanium during oxidation is simulated with oxide/metal interface migration using a finite volume method. In this simulation, the oxidation rate resulting from both oxide growth and oxygen penetration into a metal are taken into account. The results show the temperature dependency of oxygen concentration at the oxide/metal interface in the metal, which is about 21 at% up to 600°C, and increases drastically to the oxygen solubility limit at temperatures above 600°C. This suggests that high stress due to the oxygen penetration may develop in the metal near the interface. This stress distribution could be dependent on temperature according to the relation between oxygen content and lattice parameters.
| Original language | English |
|---|---|
| Pages (from-to) | C441-C444 |
| Journal | Journal of the Electrochemical Society |
| Volume | 160 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2013 Aug 20 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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Cite this
Kitashima, T., Liu, L. J., & Murakami, H. (2013). Numerical analysis of oxygen transport in alpha titanium during isothermal oxidation. Journal of the Electrochemical Society, 160(9), C441-C444. https://doi.org/10.1149/2.100309jes