Numerical analysis of oxygen transport in alpha titanium during isothermal oxidation

T. Kitashima; L. J. Liu; H. Murakami

doi:10.1149/2.100309jes

Numerical analysis of oxygen transport in alpha titanium during isothermal oxidation

T. Kitashima, L. J. Liu, H. Murakami

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Oxygen dissolution in titanium during oxidation is simulated with oxide/metal interface migration using a finite volume method. In this simulation, the oxidation rate resulting from both oxide growth and oxygen penetration into a metal are taken into account. The results show the temperature dependency of oxygen concentration at the oxide/metal interface in the metal, which is about 21 at% up to 600°C, and increases drastically to the oxygen solubility limit at temperatures above 600°C. This suggests that high stress due to the oxygen penetration may develop in the metal near the interface. This stress distribution could be dependent on temperature according to the relation between oxygen content and lattice parameters.

Original language	English
Pages (from-to)	C441-C444
Journal	Journal of the Electrochemical Society
Volume	160
Issue number	9
DOIs	https://doi.org/10.1149/2.100309jes
Publication status	Published - 2013 Aug 20
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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abstract = "Oxygen dissolution in titanium during oxidation is simulated with oxide/metal interface migration using a finite volume method. In this simulation, the oxidation rate resulting from both oxide growth and oxygen penetration into a metal are taken into account. The results show the temperature dependency of oxygen concentration at the oxide/metal interface in the metal, which is about 21 at% up to 600°C, and increases drastically to the oxygen solubility limit at temperatures above 600°C. This suggests that high stress due to the oxygen penetration may develop in the metal near the interface. This stress distribution could be dependent on temperature according to the relation between oxygen content and lattice parameters.",

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AU - Kitashima, T.

AU - Liu, L. J.

AU - Murakami, H.

PY - 2013/8/20

Y1 - 2013/8/20

N2 - Oxygen dissolution in titanium during oxidation is simulated with oxide/metal interface migration using a finite volume method. In this simulation, the oxidation rate resulting from both oxide growth and oxygen penetration into a metal are taken into account. The results show the temperature dependency of oxygen concentration at the oxide/metal interface in the metal, which is about 21 at% up to 600°C, and increases drastically to the oxygen solubility limit at temperatures above 600°C. This suggests that high stress due to the oxygen penetration may develop in the metal near the interface. This stress distribution could be dependent on temperature according to the relation between oxygen content and lattice parameters.

AB - Oxygen dissolution in titanium during oxidation is simulated with oxide/metal interface migration using a finite volume method. In this simulation, the oxidation rate resulting from both oxide growth and oxygen penetration into a metal are taken into account. The results show the temperature dependency of oxygen concentration at the oxide/metal interface in the metal, which is about 21 at% up to 600°C, and increases drastically to the oxygen solubility limit at temperatures above 600°C. This suggests that high stress due to the oxygen penetration may develop in the metal near the interface. This stress distribution could be dependent on temperature according to the relation between oxygen content and lattice parameters.

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