Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

T. Kakitsuka; Y. Shibata; M. Itoh; Y. Tohmori; Y. Yoshikuni

Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

Research output: Contribution to conference › Paper › peer-review

Abstract

Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

Original language	English
Pages	485-488
Number of pages	4
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan Duration: 2001 May 14 → 2001 May 18

Conference

Conference	2001 International Conference on Indium Phosphide and Related Materials
Country	Japan
City	Nara
Period	01/5/14 → 01/5/18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers",

abstract = "Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.",

author = "T. Kakitsuka and Y. Shibata and M. Itoh and Y. Tohmori and Y. Yoshikuni",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "485--488",

note = "2001 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2001 Through 18-05-2001",

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TY - CONF

T1 - Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

AU - Kakitsuka, T.

AU - Shibata, Y.

AU - Itoh, M.

AU - Tohmori, Y.

AU - Yoshikuni, Y.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

AB - Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

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M3 - Paper

AN - SCOPUS:0034847557

SP - 485

EP - 488

T2 - 2001 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2001 through 18 May 2001

ER -