Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

Takaaki Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

Original languageEnglish
Pages485-488
Number of pages4
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan
Duration: 2001 May 142001 May 18

Conference

Conference2001 International Conference on Indium Phosphide and Related Materials
CountryJapan
CityNara
Period01/5/1401/5/18

Fingerprint

Semiconductor optical amplifiers
Numerical analysis
Strain relaxation
Polarization
Service oriented architecture (SOA)
Epitaxial growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kakitsuka, T., Shibata, Y., Itoh, M., Tohmori, Y., & Yoshikuni, Y. (2001). Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers. 485-488. Paper presented at 2001 International Conference on Indium Phosphide and Related Materials, Nara, Japan.

Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers. / Kakitsuka, Takaaki; Shibata, Y.; Itoh, M.; Tohmori, Y.; Yoshikuni, Y.

2001. 485-488 Paper presented at 2001 International Conference on Indium Phosphide and Related Materials, Nara, Japan.

Research output: Contribution to conferencePaper

Kakitsuka, T, Shibata, Y, Itoh, M, Tohmori, Y & Yoshikuni, Y 2001, 'Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers' Paper presented at 2001 International Conference on Indium Phosphide and Related Materials, Nara, Japan, 01/5/14 - 01/5/18, pp. 485-488.
Kakitsuka T, Shibata Y, Itoh M, Tohmori Y, Yoshikuni Y. Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers. 2001. Paper presented at 2001 International Conference on Indium Phosphide and Related Materials, Nara, Japan.
Kakitsuka, Takaaki ; Shibata, Y. ; Itoh, M. ; Tohmori, Y. ; Yoshikuni, Y. / Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers. Paper presented at 2001 International Conference on Indium Phosphide and Related Materials, Nara, Japan.4 p.
@conference{ac22895b61034c1d886c3f23a5239612,
title = "Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers",
abstract = "Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.",
author = "Takaaki Kakitsuka and Y. Shibata and M. Itoh and Y. Tohmori and Y. Yoshikuni",
year = "2001",
month = "1",
day = "1",
language = "English",
pages = "485--488",
note = "2001 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2001 Through 18-05-2001",

}

TY - CONF

T1 - Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

AU - Kakitsuka, Takaaki

AU - Shibata, Y.

AU - Itoh, M.

AU - Tohmori, Y.

AU - Yoshikuni, Y.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

AB - Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

UR - http://www.scopus.com/inward/record.url?scp=0034847557&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034847557&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034847557

SP - 485

EP - 488

ER -