Abstract
Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.
| Original language | English |
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| Pages | 485-488 |
| Number of pages | 4 |
| Publication status | Published - 2001 Jan 1 |
| Externally published | Yes |
| Event | 2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan Duration: 2001 May 14 → 2001 May 18 |
Conference
| Conference | 2001 International Conference on Indium Phosphide and Related Materials |
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| Country/Territory | Japan |
| City | Nara |
| Period | 01/5/14 → 01/5/18 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering