Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

Original languageEnglish
Pages485-488
Number of pages4
Publication statusPublished - 2001 Jan 1
Event2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan
Duration: 2001 May 142001 May 18

Conference

Conference2001 International Conference on Indium Phosphide and Related Materials
CountryJapan
CityNara
Period01/5/1401/5/18

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kakitsuka, T., Shibata, Y., Itoh, M., Tohmori, Y., & Yoshikuni, Y. (2001). Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers. 485-488. Paper presented at 2001 International Conference on Indium Phosphide and Related Materials, Nara, Japan.