Abstract
Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.
| Original language | English |
|---|---|
| Pages | 485-488 |
| Number of pages | 4 |
| Publication status | Published - 2001 Jan 1 |
| Externally published | Yes |
| Event | 2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan Duration: 2001 May 14 → 2001 May 18 |
Conference
| Conference | 2001 International Conference on Indium Phosphide and Related Materials |
|---|---|
| Country | Japan |
| City | Nara |
| Period | 01/5/14 → 01/5/18 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers. / Kakitsuka, Takaaki; Shibata, Y.; Itoh, M.; Tohmori, Y.; Yoshikuni, Y.
2001. 485-488 Paper presented at 2001 International Conference on Indium Phosphide and Related Materials, Nara, Japan.Research output: Contribution to conference › Paper
}
TY - CONF
T1 - Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers
AU - Kakitsuka, Takaaki
AU - Shibata, Y.
AU - Itoh, M.
AU - Tohmori, Y.
AU - Yoshikuni, Y.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.
AB - Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.
UR - http://www.scopus.com/inward/record.url?scp=0034847557&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034847557&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:0034847557
SP - 485
EP - 488
ER -