Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers

Takaaki Kakitsuka, T. Saito, T. Nakaoka, Y. Arakawa, H. Ebe, M. Sugawara, Y. Yoshikuni

Research output: Contribution to journalConference article

8 Citations (Scopus)


The electronic structure of pyramid-like InAs/GaAs quantum dots (QDs) covered with an InGaAs strain-reducing layer is analyzed numerically, focusing on the dependence of the transition energy on the strain-reducing layer thickness. The transition energy of the QD is calculated by the effective mass approximation, taking into account the change of the strain distribution induced by the strain-reducing layer. A large transition energy redshift of more than 60 meV caused by the strain reduction in the QD is obtained, as the strain reducing layer thickness increases. Furthermore, it is found that when strain-reducing layer thickness becomes large, the transition energy redshift saturates. The calculation explains the reported experimental results correctly, which indicates that the strain reducing layer enables control of operation-wavelength over a wide range in various optical devices.

Original languageEnglish
Pages (from-to)1157-1160
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number4
Publication statusPublished - 2003 Dec 1
Externally publishedYes
Event2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
Duration: 2002 Sep 302002 Oct 3


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this