Numerical simulation of transient heat conduction in nanoscale Si devices

Yoshinari Kamakura, Tomofumi Zushi, Takanobu Watanabe, Nobuya Mori, Kenji Taniguchi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n+-n-n+ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale Si/SiO2 systems. It is shown that the lattice temperature at the drain edge is raised by the hot electron injection from the source after turning on the device, and the impact of this phenomenon becomes more significant in the smaller devices due to the worse heat conductivity.

    Original languageEnglish
    Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
    Pages1745-1748
    Number of pages4
    DOIs
    Publication statusPublished - 2010
    Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai
    Duration: 2010 Nov 12010 Nov 4

    Other

    Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
    CityShanghai
    Period10/11/110/11/4

    Fingerprint

    Electron injection
    Hot electrons
    Heat conduction
    Transient analysis
    Molecular dynamics
    Thermal conductivity
    Heating
    Electrons
    Computer simulation
    Temperature
    Hot Temperature
    Monte Carlo simulation

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

    Cite this

    Kamakura, Y., Zushi, T., Watanabe, T., Mori, N., & Taniguchi, K. (2010). Numerical simulation of transient heat conduction in nanoscale Si devices. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1745-1748). [5667342] https://doi.org/10.1109/ICSICT.2010.5667342

    Numerical simulation of transient heat conduction in nanoscale Si devices. / Kamakura, Yoshinari; Zushi, Tomofumi; Watanabe, Takanobu; Mori, Nobuya; Taniguchi, Kenji.

    ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1745-1748 5667342.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kamakura, Y, Zushi, T, Watanabe, T, Mori, N & Taniguchi, K 2010, Numerical simulation of transient heat conduction in nanoscale Si devices. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667342, pp. 1745-1748, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 10/11/1. https://doi.org/10.1109/ICSICT.2010.5667342
    Kamakura Y, Zushi T, Watanabe T, Mori N, Taniguchi K. Numerical simulation of transient heat conduction in nanoscale Si devices. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1745-1748. 5667342 https://doi.org/10.1109/ICSICT.2010.5667342
    Kamakura, Yoshinari ; Zushi, Tomofumi ; Watanabe, Takanobu ; Mori, Nobuya ; Taniguchi, Kenji. / Numerical simulation of transient heat conduction in nanoscale Si devices. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 1745-1748
    @inproceedings{96e5fe6b70e94ff9a26e04e1b38dab9b,
    title = "Numerical simulation of transient heat conduction in nanoscale Si devices",
    abstract = "Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n+-n-n+ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale Si/SiO2 systems. It is shown that the lattice temperature at the drain edge is raised by the hot electron injection from the source after turning on the device, and the impact of this phenomenon becomes more significant in the smaller devices due to the worse heat conductivity.",
    author = "Yoshinari Kamakura and Tomofumi Zushi and Takanobu Watanabe and Nobuya Mori and Kenji Taniguchi",
    year = "2010",
    doi = "10.1109/ICSICT.2010.5667342",
    language = "English",
    isbn = "9781424457984",
    pages = "1745--1748",
    booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

    }

    TY - GEN

    T1 - Numerical simulation of transient heat conduction in nanoscale Si devices

    AU - Kamakura, Yoshinari

    AU - Zushi, Tomofumi

    AU - Watanabe, Takanobu

    AU - Mori, Nobuya

    AU - Taniguchi, Kenji

    PY - 2010

    Y1 - 2010

    N2 - Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n+-n-n+ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale Si/SiO2 systems. It is shown that the lattice temperature at the drain edge is raised by the hot electron injection from the source after turning on the device, and the impact of this phenomenon becomes more significant in the smaller devices due to the worse heat conductivity.

    AB - Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n+-n-n+ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale Si/SiO2 systems. It is shown that the lattice temperature at the drain edge is raised by the hot electron injection from the source after turning on the device, and the impact of this phenomenon becomes more significant in the smaller devices due to the worse heat conductivity.

    UR - http://www.scopus.com/inward/record.url?scp=78751503288&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=78751503288&partnerID=8YFLogxK

    U2 - 10.1109/ICSICT.2010.5667342

    DO - 10.1109/ICSICT.2010.5667342

    M3 - Conference contribution

    SN - 9781424457984

    SP - 1745

    EP - 1748

    BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

    ER -