O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Naokatsu Yamamoto, Hiroki Fujioka, Kouichi Akahane, Redouane Katouf, Tetsuya Kawanishi, Hiroshi Takai, Hideyuki Sotobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

Original languageEnglish
Title of host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Publication statusPublished - 2009
Externally publishedYes
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: 2009 Jun 22009 Jun 4

Other

Other2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
CountryUnited States
CityBaltimore, MD
Period09/6/209/6/4

Fingerprint

Quantum dot lasers
Separators
Semiconductor lasers
Luminescence
Crystals
indium arsenide
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Yamamoto, N., Fujioka, H., Akahane, K., Katouf, R., Kawanishi, T., Takai, H., & Sotobayashi, H. (2009). O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 [5226125]

O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. / Yamamoto, Naokatsu; Fujioka, Hiroki; Akahane, Kouichi; Katouf, Redouane; Kawanishi, Tetsuya; Takai, Hiroshi; Sotobayashi, Hideyuki.

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5226125.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamamoto, N, Fujioka, H, Akahane, K, Katouf, R, Kawanishi, T, Takai, H & Sotobayashi, H 2009, O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009., 5226125, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, Baltimore, MD, United States, 09/6/2.
Yamamoto N, Fujioka H, Akahane K, Katouf R, Kawanishi T, Takai H et al. O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5226125
Yamamoto, Naokatsu ; Fujioka, Hiroki ; Akahane, Kouichi ; Katouf, Redouane ; Kawanishi, Tetsuya ; Takai, Hiroshi ; Sotobayashi, Hideyuki. / O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009.
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abstract = "O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.",
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AU - Kawanishi, Tetsuya

AU - Takai, Hiroshi

AU - Sotobayashi, Hideyuki

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