TY - GEN
T1 - O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures
AU - Yamamoto, Naokatsu
AU - Fujioka, Hiroki
AU - Akahane, Kouichi
AU - Katouf, Redouane
AU - Kawanishi, Tetsuya
AU - Takai, Hiroshi
AU - Sotobayashi, Hideyuki
PY - 2009/11/16
Y1 - 2009/11/16
N2 - O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
AB - O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
UR - http://www.scopus.com/inward/record.url?scp=71049161185&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71049161185&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:71049161185
SN - 9781557528698
T3 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
BT - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
T2 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Y2 - 2 June 2009 through 4 June 2009
ER -