O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Naokatsu Yamamoto; Hiroki Fujioka; Kouichi Akahane; Redouane Katouf; Tetsuya Kawanishi; Hiroshi Takai; Hideyuki Sotobayashi

O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Naokatsu Yamamoto, Hiroki Fujioka, Kouichi Akahane, Redouane Katouf, Tetsuya Kawanishi, Hiroshi Takai, Hideyuki Sotobayashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

Original language	English
Title of host publication	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Publication status	Published - 2009 Nov 16
Externally published	Yes
Event	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States Duration: 2009 Jun 2 → 2009 Jun 4

Publication series

Name	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Other

Other	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Country	United States
City	Baltimore, MD
Period	09/6/2 → 09/6/4

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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Yamamoto, N., Fujioka, H., Akahane, K., Katouf, R., Kawanishi, T., Takai, H., & Sotobayashi, H. (2009). O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 [5226125] (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. / Yamamoto, Naokatsu; Fujioka, Hiroki; Akahane, Kouichi; Katouf, Redouane; Kawanishi, Tetsuya; Takai, Hiroshi; Sotobayashi, Hideyuki.

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5226125 (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamamoto, N, Fujioka, H, Akahane, K, Katouf, R, Kawanishi, T, Takai, H & Sotobayashi, H 2009, O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009., 5226125, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, Baltimore, MD, United States, 09/6/2.

Yamamoto N, Fujioka H, Akahane K, Katouf R, Kawanishi T, Takai H et al. O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5226125. (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

Yamamoto, Naokatsu ; Fujioka, Hiroki ; Akahane, Kouichi ; Katouf, Redouane ; Kawanishi, Tetsuya ; Takai, Hiroshi ; Sotobayashi, Hideyuki. / O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

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title = "O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures",

abstract = "O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.",

author = "Naokatsu Yamamoto and Hiroki Fujioka and Kouichi Akahane and Redouane Katouf and Tetsuya Kawanishi and Hiroshi Takai and Hideyuki Sotobayashi",

year = "2009",

month = nov,

day = "16",

language = "English",

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series = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

booktitle = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

note = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 ; Conference date: 02-06-2009 Through 04-06-2009",

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T1 - O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

AU - Yamamoto, Naokatsu

AU - Fujioka, Hiroki

AU - Akahane, Kouichi

AU - Katouf, Redouane

AU - Kawanishi, Tetsuya

AU - Takai, Hiroshi

AU - Sotobayashi, Hideyuki

PY - 2009/11/16

Y1 - 2009/11/16

N2 - O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

AB - O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

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M3 - Conference contribution

AN - SCOPUS:71049161185

SN - 9781557528698

T3 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

BT - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

T2 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Y2 - 2 June 2009 through 4 June 2009

ER -

O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Abstract

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ASJC Scopus subject areas

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