Abstract
O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
| Original language | English |
|---|---|
| Title of host publication | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 |
| Publication status | Published - 2009 |
| Externally published | Yes |
| Event | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States Duration: 2009 Jun 2 → 2009 Jun 4 |
Other
| Other | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 |
|---|---|
| Country | United States |
| City | Baltimore, MD |
| Period | 09/6/2 → 09/6/4 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. / Yamamoto, Naokatsu; Fujioka, Hiroki; Akahane, Kouichi; Katouf, Redouane; Kawanishi, Tetsuya; Takai, Hiroshi; Sotobayashi, Hideyuki.
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5226125.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures
AU - Yamamoto, Naokatsu
AU - Fujioka, Hiroki
AU - Akahane, Kouichi
AU - Katouf, Redouane
AU - Kawanishi, Tetsuya
AU - Takai, Hiroshi
AU - Sotobayashi, Hideyuki
PY - 2009
Y1 - 2009
N2 - O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
AB - O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
UR - http://www.scopus.com/inward/record.url?scp=71049161185&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71049161185&partnerID=8YFLogxK
M3 - Conference contribution
SN - 9781557528698
BT - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
ER -