O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Naokatsu Yamamoto, Hiroki Fujioka, Kouichi Akahane, Redouane Katouf, Tetsuya Kawanishi, Hiroshi Takai, Hideyuki Sotobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

Original languageEnglish
Title of host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Publication statusPublished - 2009 Nov 16
Externally publishedYes
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: 2009 Jun 22009 Jun 4

Publication series

Name2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Other

Other2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
CountryUnited States
CityBaltimore, MD
Period09/6/209/6/4

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Yamamoto, N., Fujioka, H., Akahane, K., Katouf, R., Kawanishi, T., Takai, H., & Sotobayashi, H. (2009). O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 [5226125] (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).