O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Naokatsu Yamamoto, Hiroki Fujioka, Kouichi Akahane, Redouane Katouf, Tetsuya Kawanishi, Hiroshi Takai, Hideyuki Sotobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference, IQEC 2009
PublisherOptical Society of America (OSA)
ISBN (Print)9781557528698
DOIs
Publication statusPublished - 2009
Externally publishedYes
EventInternational Quantum Electronics Conference, IQEC 2009 - Baltimore, MD, United States
Duration: 2009 May 312009 Jun 5

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherInternational Quantum Electronics Conference, IQEC 2009
CountryUnited States
CityBaltimore, MD
Period09/5/3109/6/5

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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