O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Naokatsu Yamamoto; Hiroki Fujioka; Kouichi Akahane; Redouane Katouf; Tetsuya Kawanishi; Hiroshi Takai; Hideyuki Sotobayashi

doi:10.1364/cleo.2009.jthe12

O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Naokatsu Yamamoto^*, Hiroki Fujioka, Kouichi Akahane, Redouane Katouf, Tetsuya Kawanishi, Hiroshi Takai, Hideyuki Sotobayashi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

Original language	English
Title of host publication	International Quantum Electronics Conference, IQEC 2009
Publisher	Optical Society of America (OSA)
ISBN (Print)	9781557528698
DOIs	https://doi.org/10.1364/cleo.2009.jthe12
Publication status	Published - 2009
Externally published	Yes
Event	International Quantum Electronics Conference, IQEC 2009 - Baltimore, MD, United States Duration: 2009 May 31 → 2009 Jun 5

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	International Quantum Electronics Conference, IQEC 2009
Country/Territory	United States
City	Baltimore, MD
Period	09/5/31 → 09/6/5

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1364/cleo.2009.jthe12

Cite this

Yamamoto, N., Fujioka, H., Akahane, K., Katouf, R., Kawanishi, T., Takai, H., & Sotobayashi, H. (2009). O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. In International Quantum Electronics Conference, IQEC 2009 (Optics InfoBase Conference Papers). Optical Society of America (OSA). https://doi.org/10.1364/cleo.2009.jthe12

O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. / Yamamoto, Naokatsu; Fujioka, Hiroki; Akahane, Kouichi et al.

International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA), 2009. (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamamoto, N, Fujioka, H, Akahane, K, Katouf, R, Kawanishi, T, Takai, H & Sotobayashi, H 2009, O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. in International Quantum Electronics Conference, IQEC 2009. Optics InfoBase Conference Papers, Optical Society of America (OSA), International Quantum Electronics Conference, IQEC 2009, Baltimore, MD, United States, 09/5/31. https://doi.org/10.1364/cleo.2009.jthe12

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abstract = "O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.",

author = "Naokatsu Yamamoto and Hiroki Fujioka and Kouichi Akahane and Redouane Katouf and Tetsuya Kawanishi and Hiroshi Takai and Hideyuki Sotobayashi",

year = "2009",

doi = "10.1364/cleo.2009.jthe12",

language = "English",

isbn = "9781557528698",

series = "Optics InfoBase Conference Papers",

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AU - Kawanishi, Tetsuya

AU - Takai, Hiroshi

AU - Sotobayashi, Hideyuki

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AB - O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

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O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Abstract

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Other

ASJC Scopus subject areas

Access to Document

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