Abstract
Electron beam damage to thin-film SiO2 was observed with a scanning Auger electron microscope. After a certain degree of electron beam exposure, changes in both the surface topography and chemical composition were investigated. The result suggested that there is a close relationship between the beam damage and the dissipation of incident energy in thin-film SiO 2.
| Original language | English |
|---|---|
| Pages (from-to) | 6020-6022 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 50 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1979 Dec 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Ichimura, S., & Shimizu, R. (1979). Observation of electron beam damage in thin-film SiO2 on Si with scanning Auger electron microscope. Journal of Applied Physics, 50(9), 6020-6022. https://doi.org/10.1063/1.326677