Abstract
Electron beam damage to thin-film SiO2 was observed with a scanning Auger electron microscope. After a certain degree of electron beam exposure, changes in both the surface topography and chemical composition were investigated. The result suggested that there is a close relationship between the beam damage and the dissipation of incident energy in thin-film SiO 2.
Original language | English |
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Pages (from-to) | 6020-6022 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 50 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1979 Dec 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)