Observation of e2/h conductance steps in a side-gate point contact on In0.75Ga0.25As/In0.75Al 0.25As heterostructure

T. Kita*, S. Gozu, Y. Sato, S. Yamada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In 1996, it was suggested by K. J. Thomas et al. (Phys. Rev. Lett. 77,135 (1996)) that 0.7(2e2/h) conductance structure in Quasi-1 DEG (Q1DEG) at GaAs/AlGaAs heterostructure might be related to spin polarization at zero magnetic field. We have recently studied spontaneous spin-splitting in the 2DEGs formed at normal metamorphic In0.75Ga0.25As/n 0.75Al0.25As heterojunctions grown on GaAs substrates and obtained the value of ≲10 meV as the zero-field splitting at Fermi level (Y. Sato et al., J. Appl. Phys. 89, 8017 (2001)). In this work, we attempted to observe spin-related phenomena in this heterojunction Q1DEGs at zero magnetic field. We observed e2/h conductance steps in low electron concentration side-gate point contact.

Original languageEnglish
Pages (from-to)327-329
Number of pages3
JournalJournal of Superconductivity and Novel Magnetism
Issue number2
Publication statusPublished - 2003 Dec 1
Externally publishedYes


  • Quasi-1DEG
  • Spin splitting
  • Split-gates
  • e/h conductance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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