Observation of exciton-polariton emissions from a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy

Shigefusa F. Chichibu, Takayuki Sota, Paul J. Fons, Kakuya Iwata, Akimasa Yamada, Koji Matsubara, Shigeru Niki

    Research output: Contribution to journalArticle

    21 Citations (Scopus)

    Abstract

    Exciton-polariton emissions were observed at 8 K in the photoluminescence spectrum of a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy. The resonance energies of corresponding photoreflectance structures agreed with those of longitudinal and transverse excitons, i.e. upper and lower polariton branches, where A, B and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, longitudinal-transverse splitting of the B-excitonic polariton was resolved, which is due to the large oscillator strength.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume41
    Issue number8 B
    Publication statusPublished - 2002 Aug 15

    Fingerprint

    Epitaxial films
    Molecular beam epitaxy
    Sapphire
    Excitons
    polaritons
    sapphire
    molecular beam epitaxy
    excitons
    Electromagnetic waves
    oscillator strengths
    electromagnetic radiation
    Photoluminescence
    photoluminescence
    energy

    Keywords

    • a-Face Sapphire
    • Epilayer
    • Exciton-polariton
    • Photoluminescence
    • Photoreflectance
    • ZnO

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Observation of exciton-polariton emissions from a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy. / Chichibu, Shigefusa F.; Sota, Takayuki; Fons, Paul J.; Iwata, Kakuya; Yamada, Akimasa; Matsubara, Koji; Niki, Shigeru.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 8 B, 15.08.2002.

    Research output: Contribution to journalArticle

    Chichibu, Shigefusa F. ; Sota, Takayuki ; Fons, Paul J. ; Iwata, Kakuya ; Yamada, Akimasa ; Matsubara, Koji ; Niki, Shigeru. / Observation of exciton-polariton emissions from a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy. In: Japanese Journal of Applied Physics, Part 2: Letters. 2002 ; Vol. 41, No. 8 B.
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    abstract = "Exciton-polariton emissions were observed at 8 K in the photoluminescence spectrum of a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy. The resonance energies of corresponding photoreflectance structures agreed with those of longitudinal and transverse excitons, i.e. upper and lower polariton branches, where A, B and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, longitudinal-transverse splitting of the B-excitonic polariton was resolved, which is due to the large oscillator strength.",
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    AU - Chichibu, Shigefusa F.

    AU - Sota, Takayuki

    AU - Fons, Paul J.

    AU - Iwata, Kakuya

    AU - Yamada, Akimasa

    AU - Matsubara, Koji

    AU - Niki, Shigeru

    PY - 2002/8/15

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    AB - Exciton-polariton emissions were observed at 8 K in the photoluminescence spectrum of a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy. The resonance energies of corresponding photoreflectance structures agreed with those of longitudinal and transverse excitons, i.e. upper and lower polariton branches, where A, B and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, longitudinal-transverse splitting of the B-excitonic polariton was resolved, which is due to the large oscillator strength.

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