Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement

Sumio Hosaka; Hajime Koyanagi; Tsuyoshi Hasegawa; Shigeyuki Hosoki; Atsushi Hiraiwa

doi:10.1063/1.351854

Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement

Sumio Hosaka, Hajime Koyanagi, Tsuyoshi Hasegawa, Shigeyuki Hosoki, Atsushi Hiraiwa

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).

Original language	English
Pages (from-to)	688-691
Number of pages	4
Journal	Journal of Applied Physics
Volume	72
Issue number	2
DOIs	https://doi.org/10.1063/1.351854
Publication status	Published - 1992 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement",

abstract = "Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).",

author = "Sumio Hosaka and Hajime Koyanagi and Tsuyoshi Hasegawa and Shigeyuki Hosoki and Atsushi Hiraiwa",

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AU - Hosaka, Sumio

AU - Koyanagi, Hajime

AU - Hasegawa, Tsuyoshi

AU - Hosoki, Shigeyuki

AU - Hiraiwa, Atsushi

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).

AB - Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).

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