Abstract
Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).
| Original language | English |
|---|---|
| Pages (from-to) | 688-691 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 72 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1992 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement. / Hosaka, Sumio; Koyanagi, Hajime; Hasegawa, Tsuyoshi; Hosoki, Shigeyuki; Hiraiwa, Atsushi.
In: Journal of Applied Physics, Vol. 72, No. 2, 1992, p. 688-691.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement
AU - Hosaka, Sumio
AU - Koyanagi, Hajime
AU - Hasegawa, Tsuyoshi
AU - Hosoki, Shigeyuki
AU - Hiraiwa, Atsushi
PY - 1992
Y1 - 1992
N2 - Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).
AB - Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).
UR - http://www.scopus.com/inward/record.url?scp=30244543955&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=30244543955&partnerID=8YFLogxK
U2 - 10.1063/1.351854
DO - 10.1063/1.351854
M3 - Article
AN - SCOPUS:30244543955
VL - 72
SP - 688
EP - 691
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
ER -