Abstract
Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).
| Original language | English |
|---|---|
| Pages (from-to) | 688-691 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 72 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1992 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement'. Together they form a unique fingerprint.
Cite this
Hosaka, S., Koyanagi, H., Hasegawa, T., Hosoki, S., & Hiraiwa, A. (1992). Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement. Journal of Applied Physics, 72(2), 688-691. https://doi.org/10.1063/1.351854