Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement

Sumio Hosaka; Hajime Koyanagi; Tsuyoshi Hasegawa; Shigeyuki Hosoki; Atsushi Hiraiwa

doi:10.1063/1.351854

Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement

Sumio Hosaka, Hajime Koyanagi, Tsuyoshi Hasegawa, Shigeyuki Hosoki, Atsushi Hiraiwa

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).

Original language	English
Pages (from-to)	688-691
Number of pages	4
Journal	Journal of Applied Physics
Volume	72
Issue number	2
DOIs	https://doi.org/10.1063/1.351854
Publication status	Published - 1992 Dec 1

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Hosaka, S., Koyanagi, H., Hasegawa, T., Hosoki, S., & Hiraiwa, A. (1992). Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement. Journal of Applied Physics, 72(2), 688-691. https://doi.org/10.1063/1.351854

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10.1063/1.351854