Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement

Sumio Hosaka, Hajime Koyanagi, Tsuyoshi Hasegawa, Shigeyuki Hosoki, Atsushi Hiraiwa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).

Original languageEnglish
Pages (from-to)688-691
Number of pages4
JournalJournal of Applied Physics
Volume72
Issue number2
DOIs
Publication statusPublished - 1992 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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