Observation of optical anisotropy of highly uniform InAs quantum dots

M. Uemura, J. Ohta, R. Yamaguchi, K. Yamaguchi, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    We have investigated the optical anisotropy of single-layer highly uniform InAs quantum dots (QDs) by photoluminescence (PL) measurements. The high uniformity of the QDs, whose PL spectrum was clearly separated into each energy level, enabled us to observe the optical anisotropy of the ground state, the first excited state and the second excited state separately. The degree of linear polarization (DLP) was obtained to be 15.8%, 14.3% and 8.3% for the ground state, the first excited state and the second excited state, respectively. This result shows that the DLP is smaller for higher-energy states. We also measured the time evolutions of the PL polarization components using a streak camera. The DLP was found to remain constant during the measured time range.

    Original languageEnglish
    Pages (from-to)463-465
    Number of pages3
    JournalJournal of Crystal Growth
    Volume378
    DOIs
    Publication statusPublished - 2013

    Fingerprint

    Optical anisotropy
    Excited states
    Semiconductor quantum dots
    linear polarization
    quantum dots
    Polarization
    Photoluminescence
    anisotropy
    photoluminescence
    Electron energy levels
    Ground state
    excitation
    Streak cameras
    ground state
    streak cameras
    energy levels
    indium arsenide
    polarization
    energy

    Keywords

    • Molecular beam epitaxy
    • Nanostructures
    • Semiconducting III-V materials

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Materials Chemistry
    • Inorganic Chemistry

    Cite this

    Observation of optical anisotropy of highly uniform InAs quantum dots. / Uemura, M.; Ohta, J.; Yamaguchi, R.; Yamaguchi, K.; Tackeuchi, Atsushi.

    In: Journal of Crystal Growth, Vol. 378, 2013, p. 463-465.

    Research output: Contribution to journalArticle

    Uemura, M. ; Ohta, J. ; Yamaguchi, R. ; Yamaguchi, K. ; Tackeuchi, Atsushi. / Observation of optical anisotropy of highly uniform InAs quantum dots. In: Journal of Crystal Growth. 2013 ; Vol. 378. pp. 463-465.
    @article{10ddb7587b8444a988ff27a388d733e6,
    title = "Observation of optical anisotropy of highly uniform InAs quantum dots",
    abstract = "We have investigated the optical anisotropy of single-layer highly uniform InAs quantum dots (QDs) by photoluminescence (PL) measurements. The high uniformity of the QDs, whose PL spectrum was clearly separated into each energy level, enabled us to observe the optical anisotropy of the ground state, the first excited state and the second excited state separately. The degree of linear polarization (DLP) was obtained to be 15.8{\%}, 14.3{\%} and 8.3{\%} for the ground state, the first excited state and the second excited state, respectively. This result shows that the DLP is smaller for higher-energy states. We also measured the time evolutions of the PL polarization components using a streak camera. The DLP was found to remain constant during the measured time range.",
    keywords = "Molecular beam epitaxy, Nanostructures, Semiconducting III-V materials",
    author = "M. Uemura and J. Ohta and R. Yamaguchi and K. Yamaguchi and Atsushi Tackeuchi",
    year = "2013",
    doi = "10.1016/j.jcrysgro.2012.12.102",
    language = "English",
    volume = "378",
    pages = "463--465",
    journal = "Journal of Crystal Growth",
    issn = "0022-0248",
    publisher = "Elsevier",

    }

    TY - JOUR

    T1 - Observation of optical anisotropy of highly uniform InAs quantum dots

    AU - Uemura, M.

    AU - Ohta, J.

    AU - Yamaguchi, R.

    AU - Yamaguchi, K.

    AU - Tackeuchi, Atsushi

    PY - 2013

    Y1 - 2013

    N2 - We have investigated the optical anisotropy of single-layer highly uniform InAs quantum dots (QDs) by photoluminescence (PL) measurements. The high uniformity of the QDs, whose PL spectrum was clearly separated into each energy level, enabled us to observe the optical anisotropy of the ground state, the first excited state and the second excited state separately. The degree of linear polarization (DLP) was obtained to be 15.8%, 14.3% and 8.3% for the ground state, the first excited state and the second excited state, respectively. This result shows that the DLP is smaller for higher-energy states. We also measured the time evolutions of the PL polarization components using a streak camera. The DLP was found to remain constant during the measured time range.

    AB - We have investigated the optical anisotropy of single-layer highly uniform InAs quantum dots (QDs) by photoluminescence (PL) measurements. The high uniformity of the QDs, whose PL spectrum was clearly separated into each energy level, enabled us to observe the optical anisotropy of the ground state, the first excited state and the second excited state separately. The degree of linear polarization (DLP) was obtained to be 15.8%, 14.3% and 8.3% for the ground state, the first excited state and the second excited state, respectively. This result shows that the DLP is smaller for higher-energy states. We also measured the time evolutions of the PL polarization components using a streak camera. The DLP was found to remain constant during the measured time range.

    KW - Molecular beam epitaxy

    KW - Nanostructures

    KW - Semiconducting III-V materials

    UR - http://www.scopus.com/inward/record.url?scp=84885430760&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84885430760&partnerID=8YFLogxK

    U2 - 10.1016/j.jcrysgro.2012.12.102

    DO - 10.1016/j.jcrysgro.2012.12.102

    M3 - Article

    AN - SCOPUS:84885430760

    VL - 378

    SP - 463

    EP - 465

    JO - Journal of Crystal Growth

    JF - Journal of Crystal Growth

    SN - 0022-0248

    ER -