Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement

Ryo Harasawa; Naoki Yamamoto; Hao Wu; Takanori Aritake; Shulong Lu; Lian Ji; Atsushi Tackeuchi

doi:10.1002/pssb.201400321

Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement

Ryo Harasawa, Naoki Yamamoto, Hao Wu, Takanori Aritake, Shulong Lu, Lian Ji, Atsushi Tackeuchi^*

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time-resolved spin-dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300K. We have observed the electron spin relaxation times of 980ps at 10K and 95ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir-Aronov-Pikus (BAP) process is effective at 10-30K. At 100-300K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov-Perel' (DP) and Elliott-Yafet (EY) processes are effective.

Original language	English
Pages (from-to)	1244-1247
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	252
Issue number	6
DOIs	https://doi.org/10.1002/pssb.201400321
Publication status	Published - 2015 Jun 1

Keywords

InGaAsP
Semiconductors
Spin relaxation
Spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.201400321

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@article{341ea390e15b47cc8bb2baa402860934,

title = "Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement",

abstract = "We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time-resolved spin-dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300K. We have observed the electron spin relaxation times of 980ps at 10K and 95ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir-Aronov-Pikus (BAP) process is effective at 10-30K. At 100-300K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov-Perel' (DP) and Elliott-Yafet (EY) processes are effective.",

keywords = "InGaAsP, Semiconductors, Spin relaxation, Spintronics",

author = "Ryo Harasawa and Naoki Yamamoto and Hao Wu and Takanori Aritake and Shulong Lu and Lian Ji and Atsushi Tackeuchi",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2015",

month = jun,

day = "1",

doi = "10.1002/pssb.201400321",

language = "English",

volume = "252",

pages = "1244--1247",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "6",

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TY - JOUR

T1 - Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement

AU - Harasawa, Ryo

AU - Yamamoto, Naoki

AU - Wu, Hao

AU - Aritake, Takanori

AU - Lu, Shulong

AU - Ji, Lian

AU - Tackeuchi, Atsushi

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time-resolved spin-dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300K. We have observed the electron spin relaxation times of 980ps at 10K and 95ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir-Aronov-Pikus (BAP) process is effective at 10-30K. At 100-300K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov-Perel' (DP) and Elliott-Yafet (EY) processes are effective.

AB - We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time-resolved spin-dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300K. We have observed the electron spin relaxation times of 980ps at 10K and 95ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir-Aronov-Pikus (BAP) process is effective at 10-30K. At 100-300K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov-Perel' (DP) and Elliott-Yafet (EY) processes are effective.

KW - InGaAsP

KW - Semiconductors

KW - Spin relaxation

KW - Spintronics

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U2 - 10.1002/pssb.201400321

DO - 10.1002/pssb.201400321

M3 - Article

AN - SCOPUS:84930336033

SN - 0370-1972

VL - 252

SP - 1244

EP - 1247

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 6

ER -

Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement

Abstract

Keywords

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