Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement

Ryo Harasawa, Naoki Yamamoto, Hao Wu, Takanori Aritake, Shulong Lu, Lian Ji, Atsushi Tackeuchi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time-resolved spin-dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300K. We have observed the electron spin relaxation times of 980ps at 10K and 95ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir-Aronov-Pikus (BAP) process is effective at 10-30K. At 100-300K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov-Perel' (DP) and Elliott-Yafet (EY) processes are effective.

Original languageEnglish
Pages (from-to)1244-1247
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume252
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

Keywords

  • InGaAsP
  • Semiconductors
  • Spin relaxation
  • Spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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