TY - JOUR
T1 - Observation of spin relaxation in InGaAs/AlAsSb quantum wells
AU - Izumi, Sotaro
AU - Gozu, Shin Ichiro
AU - Mozume, Teruo
AU - Saeki, Yu
AU - Nukui, Takao
AU - Tackeuchi, Atsushi
PY - 2010/4/1
Y1 - 2010/4/1
N2 - We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.
AB - We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.
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U2 - 10.1143/JJAP.49.04DM03
DO - 10.1143/JJAP.49.04DM03
M3 - Article
AN - SCOPUS:77952681043
VL - 49
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04DM03
ER -