Abstract
We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.
| Original language | English |
|---|---|
| Article number | 04DM03 |
| Journal | Japanese journal of applied physics |
| Volume | 49 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2010 Apr 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Izumi, S., Gozu, S. I., Mozume, T., Saeki, Y., Nukui, T., & Tackeuchi, A. (2010). Observation of spin relaxation in InGaAs/AlAsSb quantum wells. Japanese journal of applied physics, 49(4 PART 2), [04DM03]. https://doi.org/10.1143/JJAP.49.04DM03