Observation of spin relaxation in InGaAs/AlAsSb quantum wells

Sotaro Izumi, Shin Ichiro Gozu, Teruo Mozume, Yu Saeki, Takao Nukui, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.

    Original languageEnglish
    Article number04DM03
    JournalJapanese Journal of Applied Physics
    Volume49
    Issue number4 PART 2
    DOIs
    Publication statusPublished - 2010 Apr

    Fingerprint

    Excitons
    Semiconductor quantum wells
    quantum wells
    Relaxation time
    excitons
    Reflectometers
    relaxation time
    Carrier concentration
    Pumps
    room temperature
    Temperature
    Electrons
    pumps
    reflectance
    probes
    excitation
    electrons

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Observation of spin relaxation in InGaAs/AlAsSb quantum wells. / Izumi, Sotaro; Gozu, Shin Ichiro; Mozume, Teruo; Saeki, Yu; Nukui, Takao; Tackeuchi, Atsushi.

    In: Japanese Journal of Applied Physics, Vol. 49, No. 4 PART 2, 04DM03, 04.2010.

    Research output: Contribution to journalArticle

    Izumi, Sotaro ; Gozu, Shin Ichiro ; Mozume, Teruo ; Saeki, Yu ; Nukui, Takao ; Tackeuchi, Atsushi. / Observation of spin relaxation in InGaAs/AlAsSb quantum wells. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 4 PART 2.
    @article{6dd3556790fb4fabaf5ed6cd0207b023,
    title = "Observation of spin relaxation in InGaAs/AlAsSb quantum wells",
    abstract = "We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.",
    author = "Sotaro Izumi and Gozu, {Shin Ichiro} and Teruo Mozume and Yu Saeki and Takao Nukui and Atsushi Tackeuchi",
    year = "2010",
    month = "4",
    doi = "10.1143/JJAP.49.04DM03",
    language = "English",
    volume = "49",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "4 PART 2",

    }

    TY - JOUR

    T1 - Observation of spin relaxation in InGaAs/AlAsSb quantum wells

    AU - Izumi, Sotaro

    AU - Gozu, Shin Ichiro

    AU - Mozume, Teruo

    AU - Saeki, Yu

    AU - Nukui, Takao

    AU - Tackeuchi, Atsushi

    PY - 2010/4

    Y1 - 2010/4

    N2 - We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.

    AB - We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.

    UR - http://www.scopus.com/inward/record.url?scp=77952681043&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77952681043&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.49.04DM03

    DO - 10.1143/JJAP.49.04DM03

    M3 - Article

    AN - SCOPUS:77952681043

    VL - 49

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 4 PART 2

    M1 - 04DM03

    ER -