Observation of sputtered Si surface irradiated with metal cluster complex ions

Yoshikazu Teranishi, Kouji Kondou, Yukio Fujiwara, Hidehiko Nonaka, Misuhiro Tomita, Kazuhiro Yamamoto, Toshiyuki Fujimoto, Shingo Ichimura

Research output: Contribution to journalReview article

9 Citations (Scopus)

Abstract

We report the results of surface sputtering of Si using a proto type ion source to utilize a compact cluster ion source which was developed using Os 3(CO)12 as a low-damage sputtering source. The surface roughening of Si sputtered with cluster ions with an acceleration energy of 10 keV at incidence angles between 0 and 60° was investigated. The sputtered Si surface was observed using an atomic force microscope and a scanning electron microscope. At incident angles between 0 and 45°, the surface remained smooth while at 60°, roughening was observed.

Original languageEnglish
Pages (from-to)5528-5530
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number6 B
DOIs
Publication statusPublished - 2006 Jun 20
Externally publishedYes

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Keywords

  • AFM
  • Ion cluster
  • Roughness
  • Sputter

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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