Observations of exciton and carrier spin relaxation in Be doped p-type GaAs

Naohiro Asaka, Ryo Harasawa, Shulong Lu, Pan Dai, Atsushi Tackeuchi

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    Abstract

    We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100 K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10 K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3-3.1 ns at 10-100 K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10-77 K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism.

    Original languageEnglish
    Article number112404
    JournalApplied Physics Letters
    Volume104
    Issue number11
    DOIs
    Publication statusPublished - 2014 Mar 17

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    excitons
    photoluminescence
    relaxation time
    electron spin

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    • Physics and Astronomy (miscellaneous)

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    Observations of exciton and carrier spin relaxation in Be doped p-type GaAs. / Asaka, Naohiro; Harasawa, Ryo; Lu, Shulong; Dai, Pan; Tackeuchi, Atsushi.

    In: Applied Physics Letters, Vol. 104, No. 11, 112404, 17.03.2014.

    Research output: Contribution to journalArticle

    Asaka, Naohiro ; Harasawa, Ryo ; Lu, Shulong ; Dai, Pan ; Tackeuchi, Atsushi. / Observations of exciton and carrier spin relaxation in Be doped p-type GaAs. In: Applied Physics Letters. 2014 ; Vol. 104, No. 11.
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