Ohmic contact for silicon carbide by carbon nanotubes

Masafumi Inaba, Kazuma Suzuki, Yu Hirano, Wataru Norimatsu, Michiko Kusunoki, Hiroshi Kawarada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The electrical contact properties of silicon carbide (SiC) and carbon nanotubes (CNTs) were measured by conductive atomic force microscopy (C-AFM). A CNT forest was synthesized by SiC surface decomposition. Trenches, which electrically separate the conduction area, were fabricated using a focused ion beam (FIB) without a cover layer, and the resistance of each island was measured by C-AFM. From the dependence of the resistance on the CNT forest island size, the contact resistance between the CNTs and the SiC substrate was measured. By varying the dopant density in the SiC substrate, the Schottky barrier height was evaluated to be ~0.5 eV. This is slightly higher than a previously reported result obtained from a similar setup with a metal covering the CNT forest. We assumed that the damaged region existed in the islands, which is due to the trench formation by the FIB. The commensurate barrier height was obtained with the length of the damaged region assumed to be ~3 μm. Here, we could estimate the resistivity of a CNT/SiC interface without a cover layer. This indicates that a CNT forest on SiC is useful as a brief contact electrode.

    Original languageEnglish
    Title of host publicationSilicon Carbide and Related Materials 2015
    PublisherTrans Tech Publications Ltd
    Pages561-564
    Number of pages4
    Volume858
    ISBN (Print)9783035710427
    DOIs
    Publication statusPublished - 2016
    Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
    Duration: 2015 Oct 42015 Oct 9

    Publication series

    NameMaterials Science Forum
    Volume858
    ISSN (Print)02555476

    Other

    Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
    CountryItaly
    CitySicily
    Period15/10/415/10/9

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    Keywords

    • Carbon nanotube
    • Contact resistivity
    • Schottky barrier
    • Silicon carbide

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanical Engineering
    • Mechanics of Materials

    Cite this

    Inaba, M., Suzuki, K., Hirano, Y., Norimatsu, W., Kusunoki, M., & Kawarada, H. (2016). Ohmic contact for silicon carbide by carbon nanotubes. In Silicon Carbide and Related Materials 2015 (Vol. 858, pp. 561-564). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.561