Ohmic contact for silicon carbide by carbon nanotubes

Masafumi Inaba, Kazuma Suzuki, Yu Hirano, Wataru Norimatsu, Michiko Kusunoki, Hiroshi Kawarada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The electrical contact properties of silicon carbide (SiC) and carbon nanotubes (CNTs) were measured by conductive atomic force microscopy (C-AFM). A CNT forest was synthesized by SiC surface decomposition. Trenches, which electrically separate the conduction area, were fabricated using a focused ion beam (FIB) without a cover layer, and the resistance of each island was measured by C-AFM. From the dependence of the resistance on the CNT forest island size, the contact resistance between the CNTs and the SiC substrate was measured. By varying the dopant density in the SiC substrate, the Schottky barrier height was evaluated to be ~0.5 eV. This is slightly higher than a previously reported result obtained from a similar setup with a metal covering the CNT forest. We assumed that the damaged region existed in the islands, which is due to the trench formation by the FIB. The commensurate barrier height was obtained with the length of the damaged region assumed to be ~3 μm. Here, we could estimate the resistivity of a CNT/SiC interface without a cover layer. This indicates that a CNT forest on SiC is useful as a brief contact electrode.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages561-564
Number of pages4
ISBN (Print)9783035710427
DOIs
Publication statusPublished - 2016 Jan 1
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: 2015 Oct 42015 Oct 9

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period15/10/415/10/9

Keywords

  • Carbon nanotube
  • Contact resistivity
  • Schottky barrier
  • Silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Inaba, M., Suzuki, K., Hirano, Y., Norimatsu, W., Kusunoki, M., & Kawarada, H. (2016). Ohmic contact for silicon carbide by carbon nanotubes. In F. Roccaforte, F. Giannazzo, F. La Via, R. Nipoti, D. Crippa, & M. Saggio (Eds.), Silicon Carbide and Related Materials 2015 (pp. 561-564). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.561