Abstract
We have formed ohmic contacts to p-GaN using a strained p-InGaN contact layer, and achieved the lowest contact resistance of 1.1 × 10-6 Ω-cm2 at room temperature by optimizing the contact layer thickness and its In mole fraction. We have also evaluated thermal stability of ohmic contacts to p-GaN using the strained p-InGaN contact layer. The contact resistance decreased to 2 × 10-7 Ω-cm2 at 100 C, and increased with elevating temperature above 100°C. In the temperature range up to 400 C, the contact resistances of the samples with the p-InGaN contact layer were smaller than those of the samples without the contact layer. Furthermore, the ohmic characteristics of the strained p-InGaN contact layer were less degraded even after the thermal process, compared with those of the sample without a contact layer. These results indicate that the strained p-InGaN contact layer is favorable for practical application.
Original language | English |
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Pages (from-to) | 2254-2256 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 42 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2003 Apr |
Externally published | Yes |
Keywords
- Contact resistance
- High-temperature operation
- Ohmic contact
- Thermal stability
- p-GaN
- p-InGaN
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)