Abstract
We have formed ohmic contacts to p-GaN using a strained p-InGaN contact layer, and achieved the lowest contact resistance of 1.1 × 10-6 Ω-cm2 at room temperature by optimizing the contact layer thickness and its In mole fraction. We have also evaluated thermal stability of ohmic contacts to p-GaN using the strained p-InGaN contact layer. The contact resistance decreased to 2 × 10-7 Ω-cm2 at 100 C, and increased with elevating temperature above 100°C. In the temperature range up to 400 C, the contact resistances of the samples with the p-InGaN contact layer were smaller than those of the samples without the contact layer. Furthermore, the ohmic characteristics of the strained p-InGaN contact layer were less degraded even after the thermal process, compared with those of the sample without a contact layer. These results indicate that the strained p-InGaN contact layer is favorable for practical application.
| Original language | English |
|---|---|
| Pages (from-to) | 2254-2256 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 42 |
| Issue number | 4 B |
| Publication status | Published - 2003 Apr |
| Externally published | Yes |
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Keywords
- Contact resistance
- High-temperature operation
- Ohmic contact
- p-GaN
- p-InGaN
- Thermal stability
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability. / Kumakura, Kazuhide; Makimoto, Toshiki; Kobayashi, Naoki.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 4 B, 04.2003, p. 2254-2256.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability
AU - Kumakura, Kazuhide
AU - Makimoto, Toshiki
AU - Kobayashi, Naoki
PY - 2003/4
Y1 - 2003/4
N2 - We have formed ohmic contacts to p-GaN using a strained p-InGaN contact layer, and achieved the lowest contact resistance of 1.1 × 10-6 Ω-cm2 at room temperature by optimizing the contact layer thickness and its In mole fraction. We have also evaluated thermal stability of ohmic contacts to p-GaN using the strained p-InGaN contact layer. The contact resistance decreased to 2 × 10-7 Ω-cm2 at 100 C, and increased with elevating temperature above 100°C. In the temperature range up to 400 C, the contact resistances of the samples with the p-InGaN contact layer were smaller than those of the samples without the contact layer. Furthermore, the ohmic characteristics of the strained p-InGaN contact layer were less degraded even after the thermal process, compared with those of the sample without a contact layer. These results indicate that the strained p-InGaN contact layer is favorable for practical application.
AB - We have formed ohmic contacts to p-GaN using a strained p-InGaN contact layer, and achieved the lowest contact resistance of 1.1 × 10-6 Ω-cm2 at room temperature by optimizing the contact layer thickness and its In mole fraction. We have also evaluated thermal stability of ohmic contacts to p-GaN using the strained p-InGaN contact layer. The contact resistance decreased to 2 × 10-7 Ω-cm2 at 100 C, and increased with elevating temperature above 100°C. In the temperature range up to 400 C, the contact resistances of the samples with the p-InGaN contact layer were smaller than those of the samples without the contact layer. Furthermore, the ohmic characteristics of the strained p-InGaN contact layer were less degraded even after the thermal process, compared with those of the sample without a contact layer. These results indicate that the strained p-InGaN contact layer is favorable for practical application.
KW - Contact resistance
KW - High-temperature operation
KW - Ohmic contact
KW - p-GaN
KW - p-InGaN
KW - Thermal stability
UR - http://www.scopus.com/inward/record.url?scp=0038686365&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038686365&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0038686365
VL - 42
SP - 2254
EP - 2256
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -