Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We have formed ohmic contacts to p-GaN using a strained p-InGaN contact layer, and achieved the lowest contact resistance of 1.1 × 10-6 Ω-cm2 at room temperature by optimizing the contact layer thickness and its In mole fraction. We have also evaluated thermal stability of ohmic contacts to p-GaN using the strained p-InGaN contact layer. The contact resistance decreased to 2 × 10-7 Ω-cm2 at 100 C, and increased with elevating temperature above 100°C. In the temperature range up to 400 C, the contact resistances of the samples with the p-InGaN contact layer were smaller than those of the samples without the contact layer. Furthermore, the ohmic characteristics of the strained p-InGaN contact layer were less degraded even after the thermal process, compared with those of the sample without a contact layer. These results indicate that the strained p-InGaN contact layer is favorable for practical application.

Original languageEnglish
Pages (from-to)2254-2256
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
Publication statusPublished - 2003 Apr 1
Externally publishedYes

Keywords

  • Contact resistance
  • High-temperature operation
  • Ohmic contact
  • Thermal stability
  • p-GaN
  • p-InGaN

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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