On-chip optical interconnect

Keishi Ohashi; Kenichi Nishi; Takanori Shimizu; Masafumi Nakada; Junichi Fujikata; Jun Ushida; Sunao Toru; Koichi Nose; Masayuki Mizuno; Hiroaki Yukawa; Masao Kinoshita; Nobuo Suzuki; Akiko Gomyo; Tsutomu Ishi; Daisuke Okamoto; Katsuya Furue; Toshihide Ueno; Tai Tsuchizawa; Toshifumi Watanabe; Koji Yamada; Sei Ichi Itabashi; Jun Akedo

doi:10.1109/JPROC.2009.2020331

On-chip optical interconnect

Keishi Ohashi^*, Kenichi Nishi, Takanori Shimizu, Masafumi Nakada, Junichi Fujikata, Jun Ushida, Sunao Toru, Koichi Nose, Masayuki Mizuno, Hiroaki Yukawa, Masao Kinoshita, Nobuo Suzuki, Akiko Gomyo, Tsutomu Ishi, Daisuke Okamoto, Katsuya Furue, Toshihide Ueno, Tai Tsuchizawa, Toshifumi Watanabe, Koji YamadaSei Ichi Itabashi, Jun Akedo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

101 Citations (Scopus)

Abstract

We describe a cost-effective and low-powerconsumption approach for on-chip optical interconnection. This approach includes an investigation into architectures, devices, and materials. We have proposed and fabricated a bonded structure of an si-based optical layer on a large-scale integration (LSI) chip. The fabricated optical layer contains Si nanophotodiodes for optical detectors, which are coupled with SiON waveguides using surface-plasmon antennas. Optical signals were introduced to the optical layer and distributed to the Si nanophotodiodes. The output signals from the photodiodes were sent electrically to the transimpedance-amplifier circuitries in the LSI. The signals from the photodiodes triggered of the circuitries at 5 GHz. since electrooptical modulators consume the most power in on-chip optical interconnect systems and require a large footprint, they are critical to establish on-chip optical interconnection. Two approaches are investigated: l) an architecture using a fewer number of modulators and 2) high electrooptical coefficient materials.

Original language	English
Article number	5075754
Pages (from-to)	1186-1196
Number of pages	11
Journal	Proceedings of the IEEE
Volume	97
Issue number	7
DOIs	https://doi.org/10.1109/JPROC.2009.2020331
Publication status	Published - 2009 Jul
Externally published	Yes

Keywords

Clocks
Lanthanum-modified lead zirconium titanate (plzt) ceramics
Optical interconnections
Photodiodes

ASJC Scopus subject areas

Computer Science(all)
Electrical and Electronic Engineering

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10.1109/JPROC.2009.2020331

Cite this

Ohashi, K., Nishi, K., Shimizu, T., Nakada, M., Fujikata, J., Ushida, J., Toru, S., Nose, K., Mizuno, M., Yukawa, H., Kinoshita, M., Suzuki, N., Gomyo, A., Ishi, T., Okamoto, D., Furue, K., Ueno, T., Tsuchizawa, T., Watanabe, T., ... Akedo, J. (2009). On-chip optical interconnect. Proceedings of the IEEE, 97(7), 1186-1196. [5075754]. https://doi.org/10.1109/JPROC.2009.2020331

Ohashi, K, Nishi, K, Shimizu, T, Nakada, M, Fujikata, J, Ushida, J, Toru, S, Nose, K, Mizuno, M, Yukawa, H, Kinoshita, M, Suzuki, N, Gomyo, A, Ishi, T, Okamoto, D, Furue, K, Ueno, T, Tsuchizawa, T, Watanabe, T, Yamada, K, Itabashi, SI & Akedo, J 2009, 'On-chip optical interconnect', Proceedings of the IEEE, vol. 97, no. 7, 5075754, pp. 1186-1196. https://doi.org/10.1109/JPROC.2009.2020331

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title = "On-chip optical interconnect",

abstract = "We describe a cost-effective and low-powerconsumption approach for on-chip optical interconnection. This approach includes an investigation into architectures, devices, and materials. We have proposed and fabricated a bonded structure of an si-based optical layer on a large-scale integration (LSI) chip. The fabricated optical layer contains Si nanophotodiodes for optical detectors, which are coupled with SiON waveguides using surface-plasmon antennas. Optical signals were introduced to the optical layer and distributed to the Si nanophotodiodes. The output signals from the photodiodes were sent electrically to the transimpedance-amplifier circuitries in the LSI. The signals from the photodiodes triggered of the circuitries at 5 GHz. since electrooptical modulators consume the most power in on-chip optical interconnect systems and require a large footprint, they are critical to establish on-chip optical interconnection. Two approaches are investigated: l) an architecture using a fewer number of modulators and 2) high electrooptical coefficient materials.",

keywords = "Clocks, Lanthanum-modified lead zirconium titanate (plzt) ceramics, Optical interconnections, Photodiodes",

author = "Keishi Ohashi and Kenichi Nishi and Takanori Shimizu and Masafumi Nakada and Junichi Fujikata and Jun Ushida and Sunao Toru and Koichi Nose and Masayuki Mizuno and Hiroaki Yukawa and Masao Kinoshita and Nobuo Suzuki and Akiko Gomyo and Tsutomu Ishi and Daisuke Okamoto and Katsuya Furue and Toshihide Ueno and Tai Tsuchizawa and Toshifumi Watanabe and Koji Yamada and Itabashi, {Sei Ichi} and Jun Akedo",

note = "Funding Information: Manuscript received February 23, 2009. Current version published June 12, 2009. This work was supported in part by the New Energy Development Organization under the next-generation Semiconductor Materials and Process Technology (MIRAI) Project. K. Ohashi and M. Nakada are with MIRAI-Selete and also with NEC, Nano Electronics ResearchLaboratories,Tsukuba,Ibaraki305-8501,Japan(e-mail:k-ohashi@cb.jp.nec.com). K. Nishi, T. Shimizu, J. Fujikata, J. Ushida, S. Torii, K. Nose, M. Mizuno, H. Yukawa, M. Kinoshita, N. Suzuki, A. Gomyo, T. Ishi, D. Okamoto, K. Furue, and T. Ueno are with MIRAI-Selete, Tsukuba 305-8501, Japan. T. Tsuchizawa, T. Watanabe, K. Yamada and S. Itabashi are with NTT, Microsystem Integration Laboratories, Atsugi 243-0198, Japan. J. Akedo is with AIST, Advanced Manufacturing Research Institute, Tsukuba 305-8566, Japan.",

year = "2009",

month = jul,

doi = "10.1109/JPROC.2009.2020331",

language = "English",

volume = "97",

pages = "1186--1196",

journal = "Proceedings of the Institute of Radio Engineers",

issn = "0018-9219",

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TY - JOUR

T1 - On-chip optical interconnect

AU - Ohashi, Keishi

AU - Nishi, Kenichi

AU - Shimizu, Takanori

AU - Nakada, Masafumi

AU - Fujikata, Junichi

AU - Ushida, Jun

AU - Toru, Sunao

AU - Nose, Koichi

AU - Mizuno, Masayuki

AU - Yukawa, Hiroaki

AU - Kinoshita, Masao

AU - Suzuki, Nobuo

AU - Gomyo, Akiko

AU - Ishi, Tsutomu

AU - Okamoto, Daisuke

AU - Furue, Katsuya

AU - Ueno, Toshihide

AU - Tsuchizawa, Tai

AU - Watanabe, Toshifumi

AU - Yamada, Koji

AU - Itabashi, Sei Ichi

AU - Akedo, Jun

N1 - Funding Information: Manuscript received February 23, 2009. Current version published June 12, 2009. This work was supported in part by the New Energy Development Organization under the next-generation Semiconductor Materials and Process Technology (MIRAI) Project. K. Ohashi and M. Nakada are with MIRAI-Selete and also with NEC, Nano Electronics ResearchLaboratories,Tsukuba,Ibaraki305-8501,Japan(e-mail:k-ohashi@cb.jp.nec.com). K. Nishi, T. Shimizu, J. Fujikata, J. Ushida, S. Torii, K. Nose, M. Mizuno, H. Yukawa, M. Kinoshita, N. Suzuki, A. Gomyo, T. Ishi, D. Okamoto, K. Furue, and T. Ueno are with MIRAI-Selete, Tsukuba 305-8501, Japan. T. Tsuchizawa, T. Watanabe, K. Yamada and S. Itabashi are with NTT, Microsystem Integration Laboratories, Atsugi 243-0198, Japan. J. Akedo is with AIST, Advanced Manufacturing Research Institute, Tsukuba 305-8566, Japan.

PY - 2009/7

Y1 - 2009/7

N2 - We describe a cost-effective and low-powerconsumption approach for on-chip optical interconnection. This approach includes an investigation into architectures, devices, and materials. We have proposed and fabricated a bonded structure of an si-based optical layer on a large-scale integration (LSI) chip. The fabricated optical layer contains Si nanophotodiodes for optical detectors, which are coupled with SiON waveguides using surface-plasmon antennas. Optical signals were introduced to the optical layer and distributed to the Si nanophotodiodes. The output signals from the photodiodes were sent electrically to the transimpedance-amplifier circuitries in the LSI. The signals from the photodiodes triggered of the circuitries at 5 GHz. since electrooptical modulators consume the most power in on-chip optical interconnect systems and require a large footprint, they are critical to establish on-chip optical interconnection. Two approaches are investigated: l) an architecture using a fewer number of modulators and 2) high electrooptical coefficient materials.

AB - We describe a cost-effective and low-powerconsumption approach for on-chip optical interconnection. This approach includes an investigation into architectures, devices, and materials. We have proposed and fabricated a bonded structure of an si-based optical layer on a large-scale integration (LSI) chip. The fabricated optical layer contains Si nanophotodiodes for optical detectors, which are coupled with SiON waveguides using surface-plasmon antennas. Optical signals were introduced to the optical layer and distributed to the Si nanophotodiodes. The output signals from the photodiodes were sent electrically to the transimpedance-amplifier circuitries in the LSI. The signals from the photodiodes triggered of the circuitries at 5 GHz. since electrooptical modulators consume the most power in on-chip optical interconnect systems and require a large footprint, they are critical to establish on-chip optical interconnection. Two approaches are investigated: l) an architecture using a fewer number of modulators and 2) high electrooptical coefficient materials.

KW - Clocks

KW - Lanthanum-modified lead zirconium titanate (plzt) ceramics

KW - Optical interconnections

KW - Photodiodes

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JO - Proceedings of the Institute of Radio Engineers

JF - Proceedings of the Institute of Radio Engineers

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On-chip optical interconnect

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