We describe a cost-effective and low-powerconsumption approach for on-chip optical interconnection. This approach includes an investigation into architectures, devices, and materials. We have proposed and fabricated a bonded structure of an si-based optical layer on a large-scale integration (LSI) chip. The fabricated optical layer contains Si nanophotodiodes for optical detectors, which are coupled with SiON waveguides using surface-plasmon antennas. Optical signals were introduced to the optical layer and distributed to the Si nanophotodiodes. The output signals from the photodiodes were sent electrically to the transimpedance-amplifier circuitries in the LSI. The signals from the photodiodes triggered of the circuitries at 5 GHz. since electrooptical modulators consume the most power in on-chip optical interconnect systems and require a large footprint, they are critical to establish on-chip optical interconnection. Two approaches are investigated: l) an architecture using a fewer number of modulators and 2) high electrooptical coefficient materials.
- Lanthanum-modified lead zirconium titanate (plzt) ceramics
- Optical interconnections
ASJC Scopus subject areas
- Electrical and Electronic Engineering