Abstract
An on-chip supply voltage conversion system for VLSI DRAMs, which realizes supply voltage reduction in whole RAM circuits, is proposed and applied to a 4Mb DRAM. Implementing the system on a DRAM, short channel MOSFETs could be utilized, thus achieving faster access time than a DRAM using conventional long channel MOSFETs. The system has been successfully demonstrated to be effective for high density and high speed DRAMs.
| Original language | English |
|---|---|
| Title of host publication | Conference on Solid State Devices and Materials |
| Publisher | Business Cent for Academic Soc Japan |
| Pages | 307-310 |
| Number of pages | 4 |
| ISBN (Print) | 493081314X |
| Publication status | Published - 1986 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
ON-CHIP SUPPLY VOLTAGE CONVERSION SYSTEM AND ITS APPLICATION TO A 4Mb DRAM. / Watanabe, Yohji; Watanabe, Shigeyoshi; Ohsawa, Takashi; Furuyama, Tohru; Ohuchi, Kazunori.
Conference on Solid State Devices and Materials. Business Cent for Academic Soc Japan, 1986. p. 307-310.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - ON-CHIP SUPPLY VOLTAGE CONVERSION SYSTEM AND ITS APPLICATION TO A 4Mb DRAM.
AU - Watanabe, Yohji
AU - Watanabe, Shigeyoshi
AU - Ohsawa, Takashi
AU - Furuyama, Tohru
AU - Ohuchi, Kazunori
PY - 1986
Y1 - 1986
N2 - An on-chip supply voltage conversion system for VLSI DRAMs, which realizes supply voltage reduction in whole RAM circuits, is proposed and applied to a 4Mb DRAM. Implementing the system on a DRAM, short channel MOSFETs could be utilized, thus achieving faster access time than a DRAM using conventional long channel MOSFETs. The system has been successfully demonstrated to be effective for high density and high speed DRAMs.
AB - An on-chip supply voltage conversion system for VLSI DRAMs, which realizes supply voltage reduction in whole RAM circuits, is proposed and applied to a 4Mb DRAM. Implementing the system on a DRAM, short channel MOSFETs could be utilized, thus achieving faster access time than a DRAM using conventional long channel MOSFETs. The system has been successfully demonstrated to be effective for high density and high speed DRAMs.
UR - http://www.scopus.com/inward/record.url?scp=0022893968&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022893968&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0022893968
SN - 493081314X
SP - 307
EP - 310
BT - Conference on Solid State Devices and Materials
PB - Business Cent for Academic Soc Japan
ER -