ON-CHIP SUPPLY VOLTAGE CONVERSION SYSTEM AND ITS APPLICATION TO A 4Mb DRAM.

Yohji Watanabe; Shigeyoshi Watanabe; Takashi Ohsawa; Tohru Furuyama; Kazunori Ohuchi

doi:10.7567/ssdm.1986.b-6-4

ON-CHIP SUPPLY VOLTAGE CONVERSION SYSTEM AND ITS APPLICATION TO A 4Mb DRAM.

Yohji Watanabe, Shigeyoshi Watanabe, Takashi Ohsawa, Tohru Furuyama, Kazunori Ohuchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An on-chip supply voltage conversion system for VLSI DRAMs, which realizes supply voltage reduction in whole RAM circuits, is proposed and applied to a 4Mb DRAM. Implementing the system on a DRAM, short channel MOSFETs could be utilized, thus achieving faster access time than a DRAM using conventional long channel MOSFETs. The system has been successfully demonstrated to be effective for high density and high speed DRAMs.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Business Cent for Academic Soc Japan
Pages	307-310
Number of pages	4
ISBN (Print)	493081314X, 9784930813145
DOIs	https://doi.org/10.7567/ssdm.1986.b-6-4
Publication status	Published - 1986 Jan 1
Externally published	Yes

Publication series

Name	Conference on Solid State Devices and Materials

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.7567/ssdm.1986.b-6-4

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ON-CHIP SUPPLY VOLTAGE CONVERSION SYSTEM AND ITS APPLICATION TO A 4Mb DRAM. / Watanabe, Yohji; Watanabe, Shigeyoshi; Ohsawa, Takashi; Furuyama, Tohru; Ohuchi, Kazunori.

Conference on Solid State Devices and Materials. Business Cent for Academic Soc Japan, 1986. p. 307-310 (Conference on Solid State Devices and Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Ohuchi, Kazunori

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AB - An on-chip supply voltage conversion system for VLSI DRAMs, which realizes supply voltage reduction in whole RAM circuits, is proposed and applied to a 4Mb DRAM. Implementing the system on a DRAM, short channel MOSFETs could be utilized, thus achieving faster access time than a DRAM using conventional long channel MOSFETs. The system has been successfully demonstrated to be effective for high density and high speed DRAMs.

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