Abstract
An on-chip supply voltage conversion system for VLSI DRAMs, which realizes supply voltage reduction in whole RAM circuits, is proposed and applied to a 4Mb DRAM. Implementing the system on a DRAM, short channel MOSFETs could be utilized, thus achieving faster access time than a DRAM using conventional long channel MOSFETs. The system has been successfully demonstrated to be effective for high density and high speed DRAMs.
| Original language | English |
|---|---|
| Title of host publication | Conference on Solid State Devices and Materials |
| Publisher | Business Cent for Academic Soc Japan |
| Pages | 307-310 |
| Number of pages | 4 |
| ISBN (Print) | 493081314X, 9784930813145 |
| DOIs | |
| Publication status | Published - 1986 Jan 1 |
| Externally published | Yes |
Publication series
| Name | Conference on Solid State Devices and Materials |
|---|
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Watanabe, Y., Watanabe, S., Ohsawa, T., Furuyama, T., & Ohuchi, K. (1986). ON-CHIP SUPPLY VOLTAGE CONVERSION SYSTEM AND ITS APPLICATION TO A 4Mb DRAM. In Conference on Solid State Devices and Materials (pp. 307-310). (Conference on Solid State Devices and Materials). Business Cent for Academic Soc Japan. https://doi.org/10.7567/ssdm.1986.b-6-4