ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

Kohei Takei, Shuichiro Hashimoto, Jing Sun, Xu Zhang, Shuhei Asada, Taiyu Xu, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

    Original languageEnglish
    Article number04ED07
    JournalJapanese Journal of Applied Physics
    Volume55
    Issue number4
    DOIs
    Publication statusPublished - 2016 Apr 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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  • Cite this

    Takei, K., Hashimoto, S., Sun, J., Zhang, X., Asada, S., Xu, T., Matsukawa, T., Masahara, M., & Watanabe, T. (2016). ON current enhancement of nanowire Schottky barrier tunnel field effect transistors. Japanese Journal of Applied Physics, 55(4), [04ED07]. https://doi.org/10.7567/JJAP.55.04ED07