On the gain mechanism in GaN based laser diodes

G. Mohs, Takao Aoki, R. Shimano, M. Kuwata-Gonokami, S. Nakamura

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We investigate the gain mechanism in a current GaN based laser diode design using the variable stripe length method and optical nanosecond excitation. The combination of absorption measurements, gain spectra and photoluminescence excitation data allows us to understand the fundamental mechanisms responsible for gain in these devices. We conclude that optical amplification is due to a conventional two-dimensional electron-hole plasma in contrast to the spontaneous emission mechanism in similar light emitting diode structures.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalSolid State Communications
Volume108
Issue number2
Publication statusPublished - 1998 Aug 21
Externally publishedYes

Fingerprint

Gain measurement
Photoexcitation
Spontaneous emission
Light emitting diodes
Amplification
Semiconductor lasers
Photoluminescence
semiconductor lasers
Plasmas
Electrons
spontaneous emission
excitation
light emitting diodes
photoluminescence

Keywords

  • A. semiconductors
  • D. optical properties
  • E. nonlinear optics

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Mohs, G., Aoki, T., Shimano, R., Kuwata-Gonokami, M., & Nakamura, S. (1998). On the gain mechanism in GaN based laser diodes. Solid State Communications, 108(2), 105-109.

On the gain mechanism in GaN based laser diodes. / Mohs, G.; Aoki, Takao; Shimano, R.; Kuwata-Gonokami, M.; Nakamura, S.

In: Solid State Communications, Vol. 108, No. 2, 21.08.1998, p. 105-109.

Research output: Contribution to journalArticle

Mohs, G, Aoki, T, Shimano, R, Kuwata-Gonokami, M & Nakamura, S 1998, 'On the gain mechanism in GaN based laser diodes', Solid State Communications, vol. 108, no. 2, pp. 105-109.
Mohs G, Aoki T, Shimano R, Kuwata-Gonokami M, Nakamura S. On the gain mechanism in GaN based laser diodes. Solid State Communications. 1998 Aug 21;108(2):105-109.
Mohs, G. ; Aoki, Takao ; Shimano, R. ; Kuwata-Gonokami, M. ; Nakamura, S. / On the gain mechanism in GaN based laser diodes. In: Solid State Communications. 1998 ; Vol. 108, No. 2. pp. 105-109.
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