On the gain mechanism in GaN based laser diodes

G. Mohs, T. Aoki, R. Shimano, M. Kuwata-Gonokami, S. Nakamura

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16 Citations (Scopus)

Abstract

We investigate the gain mechanism in a current GaN based laser diode design using the variable stripe length method and optical nanosecond excitation. The combination of absorption measurements, gain spectra and photoluminescence excitation data allows us to understand the fundamental mechanisms responsible for gain in these devices. We conclude that optical amplification is due to a conventional two-dimensional electron-hole plasma in contrast to the spontaneous emission mechanism in similar light emitting diode structures.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalSolid State Communications
Volume108
Issue number2
DOIs
Publication statusPublished - 1998 Aug 21

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Keywords

  • A. semiconductors
  • D. optical properties
  • E. nonlinear optics

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Mohs, G., Aoki, T., Shimano, R., Kuwata-Gonokami, M., & Nakamura, S. (1998). On the gain mechanism in GaN based laser diodes. Solid State Communications, 108(2), 105-109. https://doi.org/10.1016/S0038-1098(98)00309-3