On the length of THRU standard for TRL de-embedding on Si substrate above 110 GHz

A. Orii, M. Suizu, S. Amakawa, Kosuke Katayama, K. Takano, M. Motoyoshi, T. Yoshida, M. Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

It is known that the THRU standard (a transmission line) used for thru-reflect-line (TRL) calibration/de-embedding for S-parameter measurement has to be long enough that only a single electromagnetic mode propagates at its center for it to work reliably. But ideally, TRL standards should occupy as little precious silicon real estate as possible. This paper attempts to experimentally find out how long a THRU is long enough above 110GHz up to 170 GHz through measurements of transmission lines of various lengths. The results indicate that the length of a THRU should be at least 400 micrometers, excluding pads and pad-to-line transitions.

Original languageEnglish
Title of host publication2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings
Pages81-86
Number of pages6
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan
Duration: 2013 Mar 252013 Mar 28

Other

Other2013 International Conference on Microelectronic Test Structures, ICMTS 2013
CountryJapan
CityOsaka
Period13/3/2513/3/28

Fingerprint

Electric lines
Scattering parameters
Substrates
Calibration
Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Orii, A., Suizu, M., Amakawa, S., Katayama, K., Takano, K., Motoyoshi, M., ... Fujishima, M. (2013). On the length of THRU standard for TRL de-embedding on Si substrate above 110 GHz. In 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings (pp. 81-86). [6528150] https://doi.org/10.1109/ICMTS.2013.6528150

On the length of THRU standard for TRL de-embedding on Si substrate above 110 GHz. / Orii, A.; Suizu, M.; Amakawa, S.; Katayama, Kosuke; Takano, K.; Motoyoshi, M.; Yoshida, T.; Fujishima, M.

2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings. 2013. p. 81-86 6528150.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Orii, A, Suizu, M, Amakawa, S, Katayama, K, Takano, K, Motoyoshi, M, Yoshida, T & Fujishima, M 2013, On the length of THRU standard for TRL de-embedding on Si substrate above 110 GHz. in 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings., 6528150, pp. 81-86, 2013 International Conference on Microelectronic Test Structures, ICMTS 2013, Osaka, Japan, 13/3/25. https://doi.org/10.1109/ICMTS.2013.6528150
Orii A, Suizu M, Amakawa S, Katayama K, Takano K, Motoyoshi M et al. On the length of THRU standard for TRL de-embedding on Si substrate above 110 GHz. In 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings. 2013. p. 81-86. 6528150 https://doi.org/10.1109/ICMTS.2013.6528150
Orii, A. ; Suizu, M. ; Amakawa, S. ; Katayama, Kosuke ; Takano, K. ; Motoyoshi, M. ; Yoshida, T. ; Fujishima, M. / On the length of THRU standard for TRL de-embedding on Si substrate above 110 GHz. 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings. 2013. pp. 81-86
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