Abstract
The metal-oxide-semiconductor-field-effect-transistor (MOSFET) has been miniaturized for the high performance large-scale integrated-circuit (LSI). However, in the ultimately miniaturized MOSFET, the gate oxide failure with high leakage current is inevitable. In this study, we evaluated the origin of the gate oxide failure by Raman spectroscopy in conjunction with optical beam induced resistance change (OBIRCH) analysis. We confirmed the higher Raman intensity than the other positions at the gate oxide failure position, where the OBIRCH analysis shows the light emission. Moreover, we found that the origin on the gate oxide failure was high tensile strain in the gate polycrystalline silicon electrode.
| Original language | English |
|---|---|
| Title of host publication | Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 |
| Publisher | Electrochemical Society Inc. |
| Pages | 237-243 |
| Number of pages | 7 |
| Volume | 66 |
| Edition | 4 |
| ISBN (Electronic) | 9781607685395 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
| Externally published | Yes |
| Event | Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States Duration: 2015 May 24 → 2015 May 28 |
Other
| Other | Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting |
|---|---|
| Country/Territory | United States |
| City | Chicago |
| Period | 15/5/24 → 15/5/28 |
ASJC Scopus subject areas
- Engineering(all)