On the origin of the gate oxide failure evaluated by Raman spectroscopy

R. Yokogawa, Motohiro Tomita, T. Mizukoshi, T. Hirano, K. Kusano, K. Sasaki, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The metal-oxide-semiconductor-field-effect-transistor (MOSFET) has been miniaturized for the high performance large-scale integrated-circuit (LSI). However, in the ultimately miniaturized MOSFET, the gate oxide failure with high leakage current is inevitable. In this study, we evaluated the origin of the gate oxide failure by Raman spectroscopy in conjunction with optical beam induced resistance change (OBIRCH) analysis. We confirmed the higher Raman intensity than the other positions at the gate oxide failure position, where the OBIRCH analysis shows the light emission. Moreover, we found that the origin on the gate oxide failure was high tensile strain in the gate polycrystalline silicon electrode.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
PublisherElectrochemical Society Inc.
Pages237-243
Number of pages7
Volume66
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015 Jan 1
Externally publishedYes
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States
Duration: 2015 May 242015 May 28

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
CountryUnited States
CityChicago
Period15/5/2415/5/28

Fingerprint

Raman spectroscopy
Oxides
MOSFET devices
Tensile strain
Light emission
Polysilicon
Leakage currents
Integrated circuits
Electrodes

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yokogawa, R., Tomita, M., Mizukoshi, T., Hirano, T., Kusano, K., Sasaki, K., & Ogura, A. (2015). On the origin of the gate oxide failure evaluated by Raman spectroscopy. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 (4 ed., Vol. 66, pp. 237-243). Electrochemical Society Inc.. https://doi.org/10.1149/06604.0237ecst

On the origin of the gate oxide failure evaluated by Raman spectroscopy. / Yokogawa, R.; Tomita, Motohiro; Mizukoshi, T.; Hirano, T.; Kusano, K.; Sasaki, K.; Ogura, A.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. Vol. 66 4. ed. Electrochemical Society Inc., 2015. p. 237-243.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yokogawa, R, Tomita, M, Mizukoshi, T, Hirano, T, Kusano, K, Sasaki, K & Ogura, A 2015, On the origin of the gate oxide failure evaluated by Raman spectroscopy. in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 edn, vol. 66, Electrochemical Society Inc., pp. 237-243, Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting, Chicago, United States, 15/5/24. https://doi.org/10.1149/06604.0237ecst
Yokogawa R, Tomita M, Mizukoshi T, Hirano T, Kusano K, Sasaki K et al. On the origin of the gate oxide failure evaluated by Raman spectroscopy. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 ed. Vol. 66. Electrochemical Society Inc. 2015. p. 237-243 https://doi.org/10.1149/06604.0237ecst
Yokogawa, R. ; Tomita, Motohiro ; Mizukoshi, T. ; Hirano, T. ; Kusano, K. ; Sasaki, K. ; Ogura, A. / On the origin of the gate oxide failure evaluated by Raman spectroscopy. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. Vol. 66 4. ed. Electrochemical Society Inc., 2015. pp. 237-243
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