On the origin of the gate oxide failure evaluated by Raman spectroscopy

R. Yokogawa; Motohiro Tomita; T. Mizukoshi; T. Hirano; K. Kusano; K. Sasaki; A. Ogura

doi:10.1149/06604.0237ecst

On the origin of the gate oxide failure evaluated by Raman spectroscopy

R. Yokogawa, Motohiro Tomita, T. Mizukoshi, T. Hirano, K. Kusano, K. Sasaki, A. Ogura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The metal-oxide-semiconductor-field-effect-transistor (MOSFET) has been miniaturized for the high performance large-scale integrated-circuit (LSI). However, in the ultimately miniaturized MOSFET, the gate oxide failure with high leakage current is inevitable. In this study, we evaluated the origin of the gate oxide failure by Raman spectroscopy in conjunction with optical beam induced resistance change (OBIRCH) analysis. We confirmed the higher Raman intensity than the other positions at the gate oxide failure position, where the OBIRCH analysis shows the light emission. Moreover, we found that the origin on the gate oxide failure was high tensile strain in the gate polycrystalline silicon electrode.

Original language	English
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
Publisher	Electrochemical Society Inc.
Pages	237-243
Number of pages	7
Volume	66
Edition	4
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06604.0237ecst
Publication status	Published - 2015 Jan 1
Externally published	Yes
Event	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States Duration: 2015 May 24 → 2015 May 28

Other

Other	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
Country	United States
City	Chicago
Period	15/5/24 → 15/5/28

ASJC Scopus subject areas

Engineering(all)

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Yokogawa, R., Tomita, M., Mizukoshi, T., Hirano, T., Kusano, K., Sasaki, K., & Ogura, A. (2015). On the origin of the gate oxide failure evaluated by Raman spectroscopy. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 (4 ed., Vol. 66, pp. 237-243). Electrochemical Society Inc.. https://doi.org/10.1149/06604.0237ecst

On the origin of the gate oxide failure evaluated by Raman spectroscopy. / Yokogawa, R.; Tomita, Motohiro; Mizukoshi, T.; Hirano, T.; Kusano, K.; Sasaki, K.; Ogura, A.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. Vol. 66 4. ed. Electrochemical Society Inc., 2015. p. 237-243.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yokogawa, R, Tomita, M, Mizukoshi, T, Hirano, T, Kusano, K, Sasaki, K & Ogura, A 2015, On the origin of the gate oxide failure evaluated by Raman spectroscopy. in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 edn, vol. 66, Electrochemical Society Inc., pp. 237-243, Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting, Chicago, United States, 15/5/24. https://doi.org/10.1149/06604.0237ecst

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