On the scaling limit of the Si-IGBTs with very narrow mesa structure

Katsumi Eikyu, Atsushi Sakai, Hitoshi Matsuura, Yoshito Nakazawa, Yutaka Akiyama, Yasuo Yamaguchi, Masahide Inuishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

The very narrow mesa structures based on our 7th generation IGBT process are fabricated and it is found that the device with the narrowest mesa shows very poor short circuit (SC) withstand capability although it suppresses the conduction loss considerably. This poor SC capacity is caused by non-saturated output characteristics which are originated by collector bias induced barrier lowering in the middle of Si mesa. The current filamentation is observed in the 3D multi-cell short circuit simulation with self-heating and the SC capacity degradation due to the filamentation is enhanced in the narrower mesa structure.

Original languageEnglish
Title of host publicationProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages211-214
Number of pages4
Volume2016-July
ISBN (Electronic)9781467387682
DOIs
Publication statusPublished - 2016 Jul 25
Externally publishedYes
Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
Duration: 2016 Jun 122016 Jun 16

Other

Other28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
CountryCzech Republic
CityPrague
Period16/6/1216/6/16

Fingerprint

Insulated gate bipolar transistors (IGBT)
Short circuit currents
Circuit simulation
Heating
Degradation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Eikyu, K., Sakai, A., Matsuura, H., Nakazawa, Y., Akiyama, Y., Yamaguchi, Y., & Inuishi, M. (2016). On the scaling limit of the Si-IGBTs with very narrow mesa structure. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (Vol. 2016-July, pp. 211-214). [7520815] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520815

On the scaling limit of the Si-IGBTs with very narrow mesa structure. / Eikyu, Katsumi; Sakai, Atsushi; Matsuura, Hitoshi; Nakazawa, Yoshito; Akiyama, Yutaka; Yamaguchi, Yasuo; Inuishi, Masahide.

Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Vol. 2016-July Institute of Electrical and Electronics Engineers Inc., 2016. p. 211-214 7520815.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Eikyu, K, Sakai, A, Matsuura, H, Nakazawa, Y, Akiyama, Y, Yamaguchi, Y & Inuishi, M 2016, On the scaling limit of the Si-IGBTs with very narrow mesa structure. in Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. vol. 2016-July, 7520815, Institute of Electrical and Electronics Engineers Inc., pp. 211-214, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 16/6/12. https://doi.org/10.1109/ISPSD.2016.7520815
Eikyu K, Sakai A, Matsuura H, Nakazawa Y, Akiyama Y, Yamaguchi Y et al. On the scaling limit of the Si-IGBTs with very narrow mesa structure. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Vol. 2016-July. Institute of Electrical and Electronics Engineers Inc. 2016. p. 211-214. 7520815 https://doi.org/10.1109/ISPSD.2016.7520815
Eikyu, Katsumi ; Sakai, Atsushi ; Matsuura, Hitoshi ; Nakazawa, Yoshito ; Akiyama, Yutaka ; Yamaguchi, Yasuo ; Inuishi, Masahide. / On the scaling limit of the Si-IGBTs with very narrow mesa structure. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Vol. 2016-July Institute of Electrical and Electronics Engineers Inc., 2016. pp. 211-214
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